LFTVS18-1F3 STMicroelectronics

LFTVS18-1F3 Low forward voltage Transil, transient voltage suppressor Datasheet production data Features Strong ESD and EOS protection Very low clamping factor V /V CL BR Unidirectional device Fast response time Flip Chip Very thin package (4 bumps) Very small PCB area RoHS compliant Figure 1. Pin configuration (bump side) Complies with the following standards: A B IEC 61000-4-2 level 4 15 kV (air discharge) 1 8 kV (contact discharge) 2 Description The LFTVS18-1F3 is a single line diode designed specifically for the protection of integrated circuits Figure 2. Device configuration in portable equipment and miniaturized A1 and A2 electronics devices subject to ESD and EOS transient overvoltages. B1 and B2 TM: Transil is a trademark of STMicroelectronics September 2012 Doc ID 14608 Rev 3 1/8 This is information on a product in full production. www.st.com 8Characteristics LFTVS18-1F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Test condition Value Unit Peak pulse power dissipation P T initial = T 350 W PP j amb (8/20 s pulse) Non repetitive surge peak forward I t = 10 ms, T initial = T 5A FSM p j amb current T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics - definitions I I F Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM V F V = Stand-off voltage VCLVBR VRM RM V V = Clamping voltage I RM CL I = Peak pulse current PP I = Forward current F V = Forward voltage F Slope: 1/R d R = Dynamic resistance d I PP Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 16 V BR R I V = 12 V 250 nA RM RM (1) V I = 1 A 19 V CL PP V I = 850 mA 1.3 V F F C V = 0 V, V = 30 mV, F = 1 MHz 175 pF line R OSC 1. 8 / 20 s pulse waveform 2/8 Doc ID 14608 Rev 3