MJB44H11T4-A STMicroelectronics

MJB44H11T4-A Automotive-grade low voltage NPN power transistor Datasheet - production data Features Designed for automotive applications and TAB AEC- Q101 qualified Low collector-emitter saturation voltage Fast switching speed 3 Applications 1 Power amplifier 2 D PAK Switching circuits Description This device is an NPN transistor manufactured using new low voltage planar technology with Figure 1. Internal schematic diagram double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2 MJB44H11T4-A MJB44H11-A D PAK Tape and reel May 2014 DocID026340 Rev 1 1/11 This is information on a product in full production. www.st.comAbsolute maximum ratings MJB44H11T4-A 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 50 W TOT case Storage temperature -55 to 150 C TSTG Max. operating junction temperature 150 C TJ Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/11 DocID026340 Rev 1