Product Information

MJB44H11T4-A

MJB44H11T4-A electronic component of STMicroelectronics

Datasheet
STMicroelectronics Bipolar Transistors - Pre-Biased
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.5946 ea
Line Total: USD 1189.2

1940 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 2000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
1940 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 1000

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MJB44H11T4-A
STMicroelectronics

2000 : USD 0.5946
5000 : USD 0.5946
10000 : USD 0.5946

970 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

MJB44H11T4-A
STMicroelectronics

1 : USD 1.7908
10 : USD 1.5533
30 : USD 1.4228
100 : USD 1.2742
500 : USD 1.209
1000 : USD 1.1794

1940 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 1000

Stock Image

MJB44H11T4-A
STMicroelectronics

2000 : USD 0.5946

Read More Specifications

     
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Product Category
RoHS - XON
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Series
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Brand
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

MJB44H11T4-A Automotive-grade low voltage NPN power transistor Datasheet - production data Features Designed for automotive applications and TAB AEC- Q101 qualified Low collector-emitter saturation voltage Fast switching speed 3 Applications 1 Power amplifier 2 D PAK Switching circuits Description This device is an NPN transistor manufactured using new low voltage planar technology with Figure 1. Internal schematic diagram double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2 MJB44H11T4-A MJB44H11-A D PAK Tape and reel May 2014 DocID026340 Rev 1 1/11 This is information on a product in full production. www.st.comAbsolute maximum ratings MJB44H11T4-A 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 50 W TOT case Storage temperature -55 to 150 C TSTG Max. operating junction temperature 150 C TJ Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/11 DocID026340 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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