SCT30N120H Datasheet Silicon carbide Power MOSFET 1200 V, 42 A, 90 m (typ., T =150 C), in an HPAK-2 package J Features TAB Very tight variation of on-resistance vs temperature Very high operating temperature capability (T = 175 C) J Very fast and robust intrinsic body diode 2 3 Low capacitance 1 2 H PAK-2 Applications Solar inverters, UPS Motor drives D(TAB) High voltage DC-DC converters Switch mode power supplies Description G(1) This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an S(2,3) industry-standard outline with significantly improved thermal capability. These NCHG1DTABS23 features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT30N120H Product summary Order code SCT30N120H Marking SCT30N120 2 Package H PAK-2 Packing Tape and reel DS11186 - Rev 3 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCT30N120H Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS Drain current (continuous) at T = 25 C C I 42 A D (limited by die) I Drain current (continuous) at T = 100 C 30 A D C (1) I Drain current (pulsed) 90 A DM P Total power dissipation at T = 25 C 230 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.65 C/W thj-case (1) R Thermal resistance junction-pcb 35 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS11186 - Rev 3 page 2/15