SCTH35N65G2V-7AG Datasheet Automotive-grade silicon carbide Power MOSFET, 650 V, 55 m typ., 45 A in an 2 H PAK-7 package Features TAB V R max. I Order code DS DS(on) D SCTH35N65G2V-7AG 650 V 67 m 45 A 7 1 AEC-Q101 qualified Very fast and robust intrinsic body diode 2 H PAK-7 Extremely low gate charge and input capacitance Source sensing pin for increased efficiency Drain (TAB) Applications Main inverter (electric traction) DC/DC converter for EV/HEV Gate (1) On board charger (OBC) Driver source (2) Description Power source (3, 4, 5, 6, 7) This silicon carbide Power MOSFET device has been developed using STs N-chG1DS2PS34567DTAB nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH35N65G2V-7AG Product summary Order code SCTH35N65G2V-7AG Marking 35N65AG Package HPAK-7 Packing Tape and reel DS12029 - Rev 5 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.SCTH35N65G2V-7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating range) -5 to 18 Drain current (continuous) at T = 25 C 45 C I A D Drain current (continuous) at T = 100 C 35 C (1) I Drain current (pulsed) 90 A DM P Total power dissipation at T = 25 C 208 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.72 C/W thJC R Thermal resistance, junction-to-ambient 62.5 C/W thJA DS12029 - Rev 5 page 2/15