SCTL35N65G2V STMicroelectronics

SCTL35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 m typ., 40 A in a PowerFLAT 8x8 HV package Features 5 V R max. I Order code DS DS(on) D 4 3 2 SCTL35N65G2V 650 V 67 m 40 A 1 PowerFLAT 8x8 HV Very fast and robust intrinsic body diode Low capacitances Drain(5) Source sensing pin for increased efficiency Applications Gate(1) Switching mode power supply DC-DC converters Driver source(2) Industrial motor control Power source(3, 4) NG1DS2PS34D5 Description This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTL35N65G2V Product summary Order code SCTL35N65G2V Marking 35N65G2V Package PowerFLAT 8x8 HV Packing Tape and reel DS13474 - Rev 1 - December 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCTL35N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating range) -5 to 20 Drain current (continuous) at T = 25 C 40 C (1) I A D Drain current (continuous) at T = 100 C 40 C (2) I Drain current (pulsed) 160 A DM P Total power dissipation at T = 25 C 417 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Value limited by package. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.36 C/W thJC (1) R Thermal resistance, junction-to-board 45 C/W thJB 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS13474 - Rev 1 page 2/14