SCTW100N65G2AG STMicroelectronics

SCTW100N65G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 m typ., 100 A in an HiP247 package Features V R max. I Order code DS DS(on) D SCTW100N65G2AG 650 V 26 m 100 A AEC-Q101 qualified 3 Very fast and robust intrinsic body diode 2 Extremely low gate charge and input capacitance 1 Very high operating junction temperature capability (T = 200 C) J HiP247 Applications D(2, TAB) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) G(1) Description This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device S(3) features remarkably low on-resistance per unit area and very good switching AM01475v1 noZen performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW100N65G2AG Device summary Order code SCTW100N65G2AG Marking SCT100N65G2AG Package HiP247 Packing Tube DS11643 - Rev 4 - September 2021 www.st.com For further information contact your local STMicroelectronics sales office.SCTW100N65G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operational values) -5 to 18 Drain current (continuous) at T = 25 C 100 C I A D Drain current (continuous) at T = 100 C 70 C (1) I Drain current (pulsed) 280 A DM P Total power dissipation at T = 25 C 420 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.42 C/W thJC R Thermal resistance, junction-to-ambient 40 C/W thJA DS11643 - Rev 4 page 2/11