SCTW35N65G2VAG STMicroelectronics

SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 m (typ., T = 25 C) in an HiP247 package J Features V R typ. I Order code DS DS(on) D SCTW35N65G2VAG 650 V 55 m 45 A AEC-Q101 qualified 3 Very fast and robust intrinsic body diode 2 Low capacitance 1 HiP247 Applications Switching mode power supply D(2, TAB) EV chargers DC-DC converters G(1) Description This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching S(3) AM01475v1 noZen performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2VAG Product summary Order code SCTW35N65G2VAG Marking SCT35N65G2VAG Package HiP247 Packing Tube DS12885 - Rev 3 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCTW35N65G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating range) -5 to 18 Drain current (continuous) at T = 25 C 45 C I A D Drain current (continuous) at T = 100 C 35 C (1) I Drain current (pulsed) 90 A DM P Total power dissipation at T = 25 C 240 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.72 C/W thj-case R Thermal resistance junction-ambient 40 C/W thj-amb DS12885 - Rev 3 page 2/12