SCTW40N120G2VAG STMicroelectronics

SCTW40N120G2VAG Datasheet Automotive grade silicon carbide Power MOSFET 1200 V, 75 m typ., 33 A in an HiP247 package Features V R max. I Order code DS DS(on) D SCTW40N120G2VAG 1200 V 105 m 33 A AEC-Q101 qualified 3 Very fast and robust intrinsic body diode 2 Extremely low gate charge and input capacitance 1 Very high operating junction temperature capability (T = 200 C) J HiP247 Applications D(2, TAB) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) G(1) Description This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device S(3) features remarkably low on-resistance per unit area and very good switching AM01475v1 noZen performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW40N120G2VAG Product summary Order code SCTW40N120G2VAG Marking SCT40N120G2VAG Package HiP247 Packing Tube DS12970 - Rev 5 - November 2021 www.st.com For further information contact your local STMicroelectronics sales office.SCTW40N120G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 V V GS Gate-source voltage (pulsed, t = 25 ns repetitive overshoot during p -11 to 25 switching for an accumulated time of 10 h) Drain current (continuous) at T = 25 C 33 C I A D Drain current (continuous) at T = 100 C 25 C (1) I Drain current (pulsed) 100 A DM P Total power dissipation at T = 25 C 290 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.6 C/W thJC R Thermal resistance, junction-to-ambient 40 C/W thJA DS12970 - Rev 5 page 2/12