SCTW70N120G2V STMicroelectronics

SCTW70N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 21 m typ., 91 A in an HiP247 package Features V R max. I Order code DS DS(on) D SCTW70N120G2V 1200 V 30 m 91 A Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (T = 200 C) 3 J 2 1 HiP247 Applications Switching mode power supply D(2, TAB) DC-DC converters Industrial motor control Description This silicon carbide Power MOSFET device has been developed using STs G(1) nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction S(3) temperature. AM01475v1 noZen Product status link SCTW70N120G2V Product summary Order code SCTW70N120G2V Marking SCT70N120G2 Package HiP247 Packing Tube DS12008 - Rev 4 - January 2022 www.st.com For further information contact your local STMicroelectronics sales office.SCTW70N120G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 91 C I A D Drain current (continuous) at T = 100 C 69 C (1) I Drain current (pulsed) 274 A DM P Total power dissipation at T = 25 C 547 W TOT C T Storage temperature range stg -55 to 200 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.32 C/W thJC R Thermal resistance, junction-to-ambient 40 C/W thJA DS12008 - Rev 4 page 2/12