Product Information

SPV1001D40

SPV1001D40 electronic component of STMicroelectronics

Datasheet
Power Switch ICs - Power Distribution Cool bypass switch If 16A Vr 40V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.836 ea
Line Total: USD 4.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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SPV1001D40
STMicroelectronics

1 : USD 4.836
10 : USD 4.3056
25 : USD 3.4554
100 : USD 2.9952
250 : USD 2.7612
500 : USD 2.7144

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 14
Multiples : 1

Stock Image

SPV1001D40
STMicroelectronics

14 : USD 4.2761

     
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SPV1001 Cool bypass switch for photovoltaic applications Features K I = 16 A, V = 40 V F R K Very low forward voltage drop A Very low reverse leakage current A A K A 175 C operating junction temperature 2 TO220 D PAK Applications Photovoltaic panels Description The SPV1001 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging SPV1001D40 Tube 2 D PACK SPV1001D40TR Tape and reel SPV1001T40 TO220 Tube November 2011 Doc ID 18076 Rev 3 1/12 www.st.com 12Maximum ratings SPV1001 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Range Symbol Parameter Unit min, max V Max DC reverse voltage 40 V R I Max. forward current 16 A F Non repetitive peak surge (half-wave, single-phase, I 250 A FSM 60 Hz) ESD level Human body level 8 k V 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit 2 R Thermal resistance, junction-to-ambient (D PAK, TO220) 1.5 C/W thJC T Junction temperature operating range -40 to 175 C J T Storage temperature range -40 to 175 C STG 2/12 Doc ID 18076 Rev 3

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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