STB30N65M2AG Datasheet Automotive-grade N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB30N65M2AG 650 V 0.18 20 A 2 3 1 D PAK AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB30N65M2AG Product summary Order code STB30N65M2AG Marking 30N65M2 Package DPAK Packing Tape and reel DS12263 - Rev 2 - December 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB30N65M2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 20 A D C I Drain current (continuous) at T = 100 C 13 A D C (1) I Drain current (pulsed) 55 A DM P Total power dissipation at T = 25 C 190 W TOT C I Avalanche current, repetitive or not-repetitive (pulse width limited by T max) 2.4 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 760 mJ AS J D AR DD (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 20 A, di/dt 400 A/s V peak < V , V = 520 V. SD DS (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.66 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. DS12263 - Rev 2 page 2/15