STBR3012G2-TR STMicroelectronics

STBR3012 Datasheet High voltage rectifier for bridge applications Features A1 K Ultra low conduction losses Ultra-low reverse losses K High junction temperature capability (+175 C) DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top A coating) A ECOPACK 2 compliant (DO-247) A NC K DPAK HV DO-247 Applications SMPS Bridge Description The high quality design of this diode has produced a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Thanks to its ultra-low conduction losses, the STBR3012 is especially suitable for use as input bridge diode in battery chargers. Product status link STBR3012 Product summary Symbol Value I 30 A F(AV) V 1200 V RRM T +175 C j V (typ.) 0.95 V F DS11909 - Rev 2 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STBR3012 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Non-repetitive surge reverse voltage 1500 V RSM V Repetitive peak reverse voltage 1200 V RRM I Forward rms current 45 A F(RMS) I Average forward current T = 155 C, = 0.5 square wave 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 300 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature +175 C j Table 2. Thermal parameters Symbol Parameter Typ. value Unit R Junction to case 0.45 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2 j (1) I Reverse leakage current V = V A R R RRM T = 150 C - 10 100 j T = 25 C - 1.05 1.3 j (2) V Forward voltage drop I = 30 A V F F T = 150 C - 0.95 1.2 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.96 x I + 0.008 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS11909 - Rev 2 page 2/12