STF21NM50N STMicroelectronics

STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 2 2 N-channel 500V - 0.15 - 18A TO-220/FP/D /I PAK/TO-247 Second generation MDmesh Power MOSFET General features V DSS Type R I DS(on) D 3 ( Tjmax) 3 1 3 2 2 1 1 2 STB21NM50N 550V < 0.19 18A D PAK TO-220 TO-220FP STB21NM50N-1 550V < 0.19 18A (1) STF21NM50N 550V < 0.19 18A STP21NM50N 550V < 0.19 18A STW21NM50N 550V < 0.19 18A 3 1. Limited by wire bonding 2 1 2 100% avalanche tested TO-247 I PAK Low input capacitance and gate charge Low gate input resistance Internal schematic diagram Description The devices are realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Applications Switching application Order codes Part number Marking Package Packaging 2 STB21NM50N B21NM50N D PAK Tape & reel 2 STB21NM50N-1 B21NM50N I PAK Tube STF21NM50N F21NM50N TO-220FP Tube STP21NM50N P21NM50N TO-220 Tube STW21NM50N W21NM50N TO-247 Tube January 2007 Rev 6 1/18 www.st.com 18 Obsolete Product(s) - Obsolete Product(s)Contents STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packing mechanical data 16 6 Revision history . 17 2/18 Obsolete Product(s) - Obsolete Product(s)