STH13N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 0.62 typ., 12 A, MDmesh K5 Power MOSFET in an HPAK 2 package Features TAB V R max. I P Order code DS DS(on) D TOT STH13N120K5-2AG 1200 V 0.69 12 A 250 W 2 3 1 AEC-Q101 qualified Industrys lowest R x area 2 DS(on) H PAK-2 Industrys best FoM (figure of merit) Ultra-low gate charge D(TAB) 100% avalanche tested Zener-protected G(1) Applications Switching applications S(2,3) NCHG1DTABS23TZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH13N120K5-2AG (1) Product summary Order code STH13N120K5-2AG Marking 13N120K5 Package HPAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V according to AEC-Q101 rev. (BR)DSS C. All other tests were performed according to AEC-Q101 rev. D. DS12917 - Rev 5 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.STH13N120K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current at T = 25 C 12 A C I D Drain current at T = 100 C 7.6 A C (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) I Maximum current during repetitive or single-pulse avalanche 4 A AR (3) E Single-pulse avalanche energy 215 mJ AS (4) dv/dt Peak diode recovery voltage slope 4.5 V/ns (5) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. Pulse width limited by T max. J 3. Starting T = 25 C, I = I , V = 50 V. J D AR DD 4. I 12 A, di/dt 100 A/s, V (peak) V . SD DS (BR)DSS 5. V 960 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. DS12917 - Rev 5 page 2/15