STH30N65DM6-7AG Datasheet Automotive-grade N-channel 650 V, 102 m typ., 28 A MDmesh DM6 Power MOSFET in an HPAK-7 package Features TAB V R max. I Order code DS DS(on) D STH30N65DM6-7AG 650 V 115 m 28 A 7 1 AEC-Q101 qualified Fast-recovery body diode 2 H PAK-7 Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance 100% avalanche tested Drain(TAB) Extremely high dv/dt ruggedness Zener-protected Gate(1) Applications Switching applications Driver Power source (2) source (3, 4, 5, 6, 7) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- N-chG1DS2PS34567DTABZ recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STH30N65DM6-7AG Product summary Order code STH30N65DM6-7AG Marking 30N65DM6 Package HPAK-7 Packing Tape and reel DS13646 - Rev 2 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STH30N65DM6-7AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 28 A D C I Drain current (continuous) at T = 100 C 18 A D C (1) I Drain current (pulsed) 112 A DM P Total power dissipation at T = 25 C 223 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Operating junction temperature range C J -55 to 150 T Storage temperature range C stg 1. Pulse width limited by safe operating area. 2. I 28 A, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.56 C/W thJC (1) R Thermal resistance, junction-to-board 30 C/W thJB 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T max) 4 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 100 V) 600 mJ AS J D AR DD DS13646 - Rev 2 page 2/14