STL24N60M6 Datasheet N-channel 600 V, 0.175 typ., 15 A, MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package Features Order code V R max. I DS DS(on) D 5 STL24N60M6 600 V 209 m 15 A 4 3 Reduced switching losses 2 1 Lower R per area vs previous generation DS(on) Low gate input resistance PowerFLAT 8x8 HV 100% avalanche tested Zener-protected Drain(5) Applications Switching applications LLC converters Gate(1) Boost PFC converters Description Driver Power source (2) source (3, 4) The new MDmesh M6 technology incorporates the most recent advancements to NG1DS2PS34D5Z the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly Product status link experience for maximum end-application efficiency. STL24N60M6 Product summary Order code STL24N60M6 Marking 24N60M6 Package PowerFLAT 8x8 HV Packing Tape and reel DS12706 - Rev 1 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL24N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 15 case I A D Drain current (continuous) at T = 100 C 9 case (1) I Drain current (pulsed) 52.5 A DM P Total dissipation at T = 25 C 109 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 15 A, di/dt = 400 A/s, V < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.15 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on FR-4 board of inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 3.2 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 250 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12706 - Rev 1 page 2/15