STO65N60DM6 Datasheet Nchannel 600 V, 67 m typ., 46 A MDmesh DM6 Power MOSFET in a TOLL package Features V R max. I Order code DS DS(on) D STO65N60DM6 600 V 76 m 46 A Fast-recovery body diode Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance TO-LL type A2 100% avalanche tested Extremely high dv/dt ruggedness Drain (TAB) Zener-protected Excellent switching performance thanks to the extra driving source pin Gate(1) Applications Switching applications Driver Power source (2) source (3, 4, 5, 6, 7,8) Description N-chG1DS2PS345678DTABZ This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Maturity status link STO65N60DM6 Device summary Order code STO65N60DM6 Marking 65N60DM6 Package TO-LL type A2 Packing Tape and reel DS13572 - Rev 1 - March 2021 www.st.com/Power Transistors For further information contact your local STMicroelectronics sales office.STO65N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 46 A C (1) I D Drain current (continuous) at T = 100 C 29 A C (2) I Drain current (pulsed) 140 A DM P Total power dissipation at T = 25 C 320 W TOT C (3) dv/dt Peak diode recovery voltage slope 100 V/ns (3) Peak diode recovery current slope 1000 A/s di/dt (4) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Referred to TO-247 package. 2. Pulse width is limited by safe operating area. 3. I 46 A, V < V , V = 400 V SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.39 thJC (1) C/W Thermal resistance, junction-to-board 43 R thJB (2) 22 Thermal resistance, junction-to-board 1. When mounted on 1 inch FR-4 pcb, standard footprint 2 Oz copper board. 2. When mounted on 40x40mm FR-4 pcb, 6 cm 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 6 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 900 mJ AS j D AR DD DS13572 - Rev 1 page 2/15