STO67N60M6 Datasheet N-channel 600 V, 48 m typ., 34 A MDmesh M6 Power MOSFET in a TOLL package Features V R max. I Order code DS DS(on) D STO67N60M6 600 V 54 m 34 A Reduced switching losses Lower R per area vs previous generation DS(on) Low gate input resistance TO-LL type A2 100% avalanche tested Zener-protected Drain (TAB) High creepage package Excellent switching performance thanks to the extra driving source pin Gate(1) Applications Switching applications Driver Power LLC converters source (2) source (3, 4, 5, 6, 7,8) Boost PFC converters N-chG1DS2PS345678DTABZ Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STO67N60M6 Device summary Order code STO67N60M6 Marking 67N60M6 Package TO-LL type A2 Packing Tape and reel DS13208 - Rev 2 - April 2021 www.st.com For further information contact your local STMicroelectronics sales office.STO67N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 34 A C I D Drain current (continuous) at T = 100 C 21 A C (1) I Drain current (pulsed) 200 A DM P Total power dissipation at T = 25 C 150 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 100 V/ns dv/dt T Storage temperature range C stg -55 to 150 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. 2. I 34 A, di/dt 400 A/s, V (peak) < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.83 C/W thJC (1) Thermal resistance, junction-to-ambient 43 R C/W thJA (2) 22 Thermal resistance, junction-to-ambient 1. When mounted on 1 inch FR-4 pcb, standard footprint 2 Oz copper board. 2. When mounted on 40x40mm FR-4 pcb, 6 cm 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max.) 6 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 760 mJ AS J D AR DD DS13208 - Rev 2 page 2/15