X-On Electronics has gained recognition as a prominent supplier of STPS20L15D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS20L15D Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the STPS20L15D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS20L15D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
STPS20L15 Low drop OR-ing power Schottky diode Datasheet - production data Description K A Packaged in TO-220AC or DPAK, this device is especially intended for use as an OR-ing diode in K K fault tolerant power supply equipments. K Table 1: Device summary Symbol Value A I 20 A F(AV) A K A NC VRRM 15 V NC V (typ.) 0.28 V F TO-220AC DPAK Tj (max.) 125 C Features Very low forward voltage drop for less power dissipation and reduced heatsink size Reverse voltage suited to OR-ing of 3 V, 5 V and 12 V rails Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand October 2016 DocID5512 Rev 4 1/12 www.st.com This is information on a product in full production. Characteristics STPS20L15 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 15 V I Forward rms current 30 A F(RMS) IF(AV) Average forward current TC = 115 C, DC 20 A I Surge non repetitive forward current t = 10 ms sinusoidal 310 A FSM p PARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 970 W T Storage temperature range -65 to +150 stg C (1) Tj Maximum operating junction temperature 125 Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case 1.6 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 6 (1) I Reverse leakage current V = 15 V mA R R T = 100 C - 200 500 j IF = 19 A - 0.41 T = 25 C j I = 40 A - 0.52 F (1) VF Forward voltage drop V IF = 19 A - 0.28 0.33 T = 125 C j I = 40 A 0.42 0.50 F Notes: (1) Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: -3 2 P = 0.18 x IF(AV) + 8.10 x IF (RMS) 2/12 DocID5512 Rev 4
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