STPS2545CGY-TR STMicroelectronics

STPS2545C-Y Automotive power Schottky rectifier Datasheet - production data Description A1 K Dual center tap Schottky rectifier suited for switch A2 mode power supply and high frequency DC to DC converters. This device is intended for use in K low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 1: Device summary Symbol Value A2 IF(AV) 2 x 12.5 A A1 VRRM 45 V DPAK V (typ.) 0.5 V F Tj (max.) 175 C Features AEC-Q101 qualified Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capability specified PPAP capable October 2016 DocID17260 Rev 3 1/10 www.st.com This is information on a product in full production. Characteristics STPS2545C-Y 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V I Forward rms current 30 A F(RMS) Average forward current I T = 160 C Per diode 12.5 A F(AV) C = 0.5, square wave I Surge non repetitive forward current t = 10 ms sinusoidal 200 A FSM p tp = 2 s square, I Repetitive peak reverse current 1 A RRM F = 1 kHz I Non repetitive peak reverse current t = 100 s square 2 A RSM p tp = 10 s, (1) P Repetitive peak avalanche power 340 W ARM Tj = 125 C T Storage temperature range -65 to +175 stg C (2) Tj Maximum operating junction temperature -40 to +175 dV / dt Critical rate of rise reverse voltage 10000 V / s Notes: (1) For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Value Unit Per diode 1.6 Rth(j-c) Junction to case Total 1.1 C/W Rth(c) Coupling 0.6 When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/10 DocID17260 Rev 3