STW50N65DM6 Datasheet N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package Features V R max. I Order code DS DS(on) D STW50N65DM6 650 V 91 m 33 A Fast-recovery body diode 3 Lower R per area vs previous generation DS(on) 2 1 Low gate charge, input capacitance and resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications G(1) Switching applications S(3) Description AM01476v1 tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW50N65DM6 Product summary Order code STW50N65DM6 Marking 50N65DM6 Package TO-247 Packing Tube DS13174 - Rev 2 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW50N65DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 33 A D C I Drain current (continuous) at T = 100 C 21 A D C (1) I Drain current (pulsed) 120 A DM P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area 2. I 33 A, V (peak) < V , V = 400V SD DS (BR)DSS DD 3. V 520V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 9 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 560 mJ AS j D AR DD DS13174 - Rev 2 page 2/12