STW68N65DM6-4AG Datasheet Automotive N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO247 4 package Features V R max. I Order code DS DS(on) D STW68N65DM6-4AG 650 V 39 m 72 A 4 Designed for automotive applications 3 2 Fast-recovery body diode 1 Lower R per area vs previous generation DS(on) TO247-4 Low gate charge, input capacitance and resistance Drain(1, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Excellent switching performance thanks to the extra driving source pin Zener-protected Gate(4) Driver Applications source (3) Switching applications Power source (2) AM10177v2Z Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW68N65DM6-4AG Product summary Order code STW68N65DM6-4AG Marking 68N65DM6AG Package TO247-4 Packing Tube DS13326 - Rev 2 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW68N65DM6-4AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 72 A D C I Drain current (continuous) at T = 100 C 46 A D C (1) I Drain current (pulsed) 280 A DM P Total power dissipation at T = 25 C 480 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range C STG -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 72 A, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.26 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (t limited by T max) 9 A AR p J E Single pulse avalanche energy (starting T = 25 C, I = I ) 1.9 J AS J D AR DS13326 - Rev 2 page 2/12