STW70N65DM6 Datasheet N-channel 650 V, 36 m typ., 68 A MDmesh DM6 Power MOSFET in a TO247 package Features V R . I Order code DS DS(on) max D STW70N65DM6 650 V 40 m 68 A Fast-recovery body diode 3 Lower R per area vs previous generation DS(on) 2 1 Low gate charge, input capacitance and resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications G(1) Switching applications S(3) Description AM01476v1 tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW70N65DM6 Product summary Order code STW70N65DM6 Marking 70N65DM6 Package TO-247 Packing Tube DS13265 - Rev 3 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW70N65DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 68 A D C I Drain current (continuous) at T = 100 C 43 A D C (1) I Drain current (pulsed) 260 A DM P Total power dissipation at T = 25 C 450 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range C STG -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 68 A, V < V , V = 400 V. SD DS (peak) (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (t limited by T max) 8 A AR p J E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 1.8 J AS J D AR DD DS13265 - Rev 3 page 2/12