T1235T-8G STMicroelectronics

T1235T-8G 12 A Snubberless Triac Datasheet -production data Description Available in SMD, the T1235T-8G Triac can be A2 used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber RC circuit when the limits defined are respected. A2 A1 DPAK package is UL94-V0 flammability resin compliance. G Package environmentally friendly Ecopack 2 DPAK graded (RoHS and Halogen Free compliance). Snubberless is a trademark of STMicroelectronics. Features Figure 1: Functional diagram High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 C maximum Tj Three quadrants A2 Surge capability V , V = 900 V DSM RSM A2: Anode2 A1: Anode1 Benefits High immunity to turn-on thanks to high G: Gate static dV/dt G Better turn-off in high temperature environments thanks to (dI/dt)c A1 Increase of thermal margin due to extended working Tj up to 150 C Good thermal resistance due to non-insulated tab Table 1: Device summary Symbol Value Unit Applications I 12 A T(RMS) General purpose AC line load switching VDRM/VRRM 800 V Motor control circuits Home appliances V /V 900 V DSM RSM Heating IGT 35 mA Lighting Inrush current limiting circuits Overvoltage crowbar protection December 2017 DocID031279 Rev 1 1/10 www.st.com This is information on a product in full production. Characteristics T1235T-8G 1 Characteristics Table 2: Absolute maximum ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Tc = 124 C 12 A t = 16.7 ms 95 p Non repetitive surge peak on-state current, ITSM A T initial = 25 C j tp = 20 ms 90 2 2 2 I t I t value for fusing T initial = 25 C 54 A s j Critical rate of rise of on-state current, dl/dt f = 100 Hz 100 A/s IG = 2 x IGT, tr 100 ns T = 150 C 600 V j VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 800 V V /V Non Repetitive peak off-state voltage t = 10 ms 900 V DSM RSM p IGM Peak gate current tp = 20 s Tj = 150 C 4 A P Average gate power dissipation T = 150 C 1 W G(AV) j Tstg Storage junction temperature range -40 to +150 C T Operating junction temperature range -40 to +150 C j Table 3: Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants Tj Value Unit V = 12 V, R = 33 I - II - III Min. 1.75 mA D L IGT VD = 12 V, RL = 33 I - II - III Max. 35 mA V V = 12 V, R = 33 I - II - III Max. 1.3 V GT D L VGD VD = VDRM, RL = 3.3 k, Tj = 150 C I - II - III Min. 0.2 V I = 1.2 x I I - III Max. 60 mA G GT IL IG = 1.2 x IGT II Max. 80 mA (1) I I = 500 mA, gate open Max. 40 mA H T VD = 536 V, gate open Tj = 125 C Min. 2000 V/s (1) dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j Tj = 125 C Min. 12 A/ms (1) (dl/dt)c Without snubber, (dV/dt)c > 20 V/s T = 150 C Min. 6 A/ms j Notes: (1) For both polarities of A2 referenced to A1. 2/10 DocID031279 Rev 1