T1235T-8I 12 A Snubberless Triac Datasheet -production data Description Available in through-hole package, the T1235T-8I Triac can be used for the on/off or phase angle control function in general purpose AC switching A1 where high commutation capability is required. A2 TO220AB insulated G This device can be used without a snubber RC circuit when the limits defined are respected. TO-220AB insulated provides tab insulation, UL1557 certified, rated at 2.5 kV RMS and Features UL-94, V0 resin compliance. High static dV/dt High dynamic turn-off commutation Package environmentally friendly Ecopack 2 (dl/dt)c graded (RoHS and Halogen Free compliance). 150 C maximum T j Snubberless is a trademark of Three quadrants STMicroelectronics. Built-in ceramic for tab insulation Figure 1: Functional diagram Compliance to UL1557 standard (ref : E81734) A2 ECOPACK 2 compliant component Complies with UL94,V0 A2: Anode2 Surge capability VDSM, VRSM = 900 V A1: Anode1 G : Gate G Benefits A1 High immunity to false turn-on thanks to high static dV/dt Table 1: Device summary Better turn-off in high temperature environments thanks to (dI/dt)c Symbol Value Unit Increase of thermal margin due to extended I 12 A T(RMS) working T up to 150 C j VDRM/VRRM 800 V Better thermal resistance due to the ceramic inside the package V /V 900 V DSM RSM IGT 35 mA Applications General purpose AC line load switching Motor control circuits Home appliances Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection December 2017 DocID030976 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics T1235T-8I 1 Characteristics Table 2: Absolute maximum ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Tc = 114 C 12 A t = 16.7 ms 95 p Non repetitive surge peak on-state current, ITSM A T initial = 25 C j tp = 20 ms 90 2 2 2 I t I t value for fusing T initial = 25 C 54 A s j Critical rate of rise of on-state current, dl/dt f = 100 Hz 100 A/s IG = 2 x IGT, tr 100 ns T = 150 C 600 V j VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 800 V V /V Non Repetitive peak off-state voltage t = 10 ms 900 V DSM RSM p IGM Peak gate current tp = 20 s Tj = 150 C 4 A P Average gate power dissipation T = 150 C 1 W G(AV) j Tstg Storage junction temperature range -40 to +150 C T Operating junction temperature range -40 to +150 C j TL Maximum lead temperature for soldering during 10 s 260 C V Insulation RMS voltage, 1 minute, UL1557 certified (E81734) 2.5 kV ins Table 3: Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants Tj Value Unit V = 12 V, R = 33 I - II - III Min. 1.75 mA D L IGT VD = 12 V, RL = 33 I - II - III Max. 35 mA V V = 12 V, R = 33 I - II - III Max. 1.3 V GT D L VGD VD = VDRM, RL = 3.3 k, Tj = 150 C I - II - III Min. 0.2 V I = 1.2 x I I - III Max. 60 mA G GT IL IG = 1.2 x IGT II Max. 80 mA (1) I I = 500 mA, gate open Max. 40 mA H T VD = 536 V, gate open Tj = 125 C Min. 2000 V/s (1) dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j Tj = 125 C Min. 12 A/ms (1) (dl/dt)c Without snubber, (dV/dt)c > 20 V/s T = 150 C Min. 6 A/ms j Notes: (1) For both polarities of A2 referenced to A1. 2/9 DocID030976 Rev 2