X-On Electronics has gained recognition as a prominent supplier of THBT20011D ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. THBT20011D ESD Suppressors / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

THBT20011D STMicroelectronics

THBT20011D electronic component of STMicroelectronics
THBT20011D STMicroelectronics
THBT20011D ESD Suppressors / TVS Diodes
THBT20011D  Circuit Protection

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See Product Specifications
Part No. THBT20011D
Manufacturer: STMicroelectronics
Category: ESD Suppressors / TVS Diodes
Description: STMicroelectronics TVS Diode Arrays 200V 50uA OV Prot
Datasheet: THBT20011D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.5095
10 : USD 2.1271
100 : USD 1.7043
500 : USD 1.5054
1000 : USD 1.342
2500 : USD 1.307
5000 : USD 1.307
10000 : USD 1.2603
25000 : USD 1.2136
N/A

Obsolete
0
MOQ : 38
Multiples : 1
38 : USD 1.5928
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Polarity
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Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
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Maximum Operating Temperature
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We are delighted to provide the THBT20011D from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the THBT20011D and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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THBT15011, THBT20011, THBT27011 Tripolar overvoltage protection for telecom line Features bidirectional crowbar protection between TIP and GND, RING and GND and between TIP and RING peak pulse current: I = 30 A for 10/1000 s surge PP holding current: I = 150 mA H SO-8 Complies with Bellcore standard Figure 1. Schematic diagram TR-NWT-001089-Core, (second level) with line series resistors: 10/1000 s, 1000 V 2/10 s, 2500 V (first level) TIP 1 8 TIP 2/10 s, 5000 V GND 2 7 GND Description GND GND 3 6 Dedicated to telecommunication equipment RING 4 5 RING protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The 4-point configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges to meet the SLIC maximum ratings. December 2010 Doc ID 3767 Rev 9 1/11 www.st.com 11Characteristics THBT15011, THBT20011, THBT27011 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) (2) I Peak pulse current 10 / 1000 s 30 A PP t = 10 ms 8 Non repetitive surge peak on-state current p I A TSM (F = 50 Hz) t = 1 s 3.5 Tstg - 40 to + 150 Storage temperature range C Maximum junction temperature Tj 150 T Maximum lead temperature for soldering during 10s 260 C L 1. For pulse waveform see Figure 2 2. See Figure 7: Test circuit 4 for I parameter PP Figure 2. Pulse waveform %I PP Repetitive peak pulse current 10 0 t = rise time (s) r t = pulse duration time (s) p 50 0 t t t r p Figure 3. Surge peak current versus overload duration ITSM(A) 10 F=50Hz 9 Tj initial=25C 8 7 6 5 4 3 2 1 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to ambient 170 C/W th(j-a) 2/11 Doc ID 3767 Rev 9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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