VNS1NV04PTR-E STMicroelectronics

VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value 2 Max on-state resistance (per ch.) R 250 m ON 3 Current limitation (typ) I 1.7 A LIMH 2 1 Drain-source clamp voltage V 40 V CLAMP SOT-223 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Description Low current drawn from input pin The VNN1NV04P-E, VNS1NV04P-E are Diagnostic feedback through input pin monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, ESD protection intended for replacement of standard Power Direct access to the gate of the Power MOSFETs from DC up to 50 kHz applications. MOSFET (analog driving) Built in thermal shutdown, linear current limitation Compatible with standard Power MOSFET and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Order codes Package Tube Tape and reel SOT-223 VNN1NV04P-E VNN1NV04PTR-E SO-8 VNS1NV04P-E VNS1NV04PTR-E September 2013 Doc ID 15586 Rev 3 1/28 www.st.com 28 Contents VNN1NV04P-E, VNS1NV04P-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 12 3 Protection features . 16 4 Package and PCB thermal data . 17 4.1 SOT-223 thermal data . 17 4.2 SO-8 thermal data 19 5 Package and packing information . 22 5.1 SOT-223 mechanical data 22 5.2 SO8 mechanical data 23 5.3 SOT-223 packing information 25 5.4 SO8 packing information . 26 6 Revision history . 27 2/28 Doc ID 15586 Rev 3