VNN7NV04P-E, VNS7NV04P-E OMNIFET II fully autoprotected Power MOSFET Features 2 Type R I V DS(on) lim clamp 3 VNN7NV04P-E 2 1 60 m 6A 40 V SO-8 VNS7NV04P-E SOT-223 Linear current limitation Thermal shutdown Description Short circuit protection The VNN7NV04P-E, VNS7NV04P-E, are Integrated clamp monolithic devices designed in Low current drawn from input pin STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power Diagnostic feedback through input pin MOSFETs from DC up to 50 kHz applications. ESD protection Built in thermal shutdown, linear current limitation Direct access to the gate of the Power and overvoltage clamp protect the chip in harsh MOSFET (analog driving) environments. Compatible with standard Power MOSFET in Fault feedback can be detected by monitoring the compliance with the 2002/95/EC European voltage at the input pin. Directive Table 1. Device summary Order codes Package Tube Tape and reel SOT-223 - VNN7NV04PTR-E SO-8 VNS7NV04P-E VNS7NV04PTR-E September 2013 Doc ID 15632 Rev 4 1/29 www.st.com 1 Contents VNN7NV04P-E, VNS7NV04P-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 3 Protection features 9 3.1 Electrical characteristics curves 12 3.2 SO-8 maximum demagnetization energy . 16 3.3 SOT-223 maximum demagnetization energy 17 4 Package and PCB thermal data . 18 4.1 SO-8 thermal data 18 4.2 SOT-223 thermal data . 20 5 Package and packing information . 23 5.1 SOT-223 mechanical data 23 5.2 SO-8 mechanical data . 24 5.3 SOT-223 packing information 26 5.4 SO-8 packing information . 27 6 Revision history . 28 2/29 Doc ID 15632 Rev 4