VNS3NV04PTR-E STMicroelectronics

VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet production data Features 2 Type R I V DS(on) lim clamp 3 VNN3NV04P-E 2 120 m 3.5 A 40 V 1 VNS3NV04P-E SO-8 SOT-223 Linear current limitation Thermal shutdown Description Short circuit protection Integrated clamp The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in Low current drawn from input pin STMicroelectronics VIPower M0-3 Technology, Diagnostic feedback through input pin intended for replacement of standard Power ESD protection MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation Direct access to the gate of the Power and overvoltage clamp protect the chip in harsh MOSFET (analog driving) environments. Compatible with standard Power MOSFET in Fault feedback can be detected by monitoring the compliance with the 2002/95/EC European voltage at the input pin. directive Table 1. Device summary Order codes Package Tube Tape and reel SOT-223 VNN3NV04PTR-E SO-8 VNS3NV04P-E VNS3NV04PTR-E September 2013 Doc ID 15626 Rev. 5 1/22 This is information on a product in full production. www.st.com 1Contents VNN3NV04P-E, VNS3NV04P-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 3 Protection features 9 3.1 Electrical characteristics curves 12 4 Package and packing information . 16 4.1 SOT-223 mechanical data 16 4.2 SO-8 mechanical data . 17 4.3 SOT-223 packing information 19 4.4 SO-8 packing information . 20 5 Revision history . 21 2/22 Doc ID 15626 Rev. 5