BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Signal Product
NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix on
packing code and prefix on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260C/10s
SOT-23
- Weight: 0.008gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted)
A
PARAMETER SYMBOL VALUE UNIT
Power dissipation P 200 mW
D
BC846 80
Collector-Base Voltage BC847 V
50 V
CBO
BC848 30
BC846 65
Collector-Emitter Voltage BC847 V 45 V
CEO
BC848 30
BC846 6
Emitter-Base Voltage BC847 V 6 V
EBO
BC848 5
Collector Current I 0.1
A
C
Junction and Storage Temperature Range T , T -55 to + 150 C
J STG
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER MIN MAX
SYMBOL UNIT
BC846 80
Collector-Base Breakdown Voltage I = 10AI = 0 V 50 V
BC847 -
C E (BR)CBO
30
BC848
BC846 65
Collector-Emitter Breakdown Voltage I = 10mA I = 0 V 45 - V
BC847
C B (BR)CEO
BC848 30
6
BC846
I = 1AI = 0 V
Emitter-Base Breakdown Voltage 6 - V
BC847 E C (BR)EBO
BC848 5
Collector Cut-off Current V = 30V I = 0 I - 100
nA
CB E CBO
Emitter Cut-off Current V = 5 V I =0 I - 0.1 A
EB C EBO
220
BC846A, BC847A, BC848A 110
V = 5V I = 2mA h
DC Current Gain BC846B, BC847B, BC848B 200 450
CE C FE
BC847C, BC848C 420 800
I = 100mA I = 5mA V - 0.5
Collector-Emitter Saturation Voltage V
C B CE(sat)
Base-Emitter Saturation Voltage I = 100mA I = 5mA V - 1.1 V
C B BE(sat)
V = 5V I = 10 mA f
Transition frequency f= 100MHz 100 - MHz
CE C T
Version: G14
Document Number: DS_S1404004BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (BC846A/B, BC847A/B/C, BC848A/B/C)
(TA=25 unless otherwise noted)
Fig.2 DC Current Gain
Fig.1 Static Characteristic
400
100
I = 400A
B (1)
I = 350A
B
300
80
I = 300A
B
(2)
I = 250A
h
B 200
FE
60
I = 200A
B
(3)
I = 150A
B 100
40
I = 100A
B
20
0
I = 50A 0 1 10 100 1000
B
V = 5 V. I (mA)
CE C
0
(1) T = 150 C.
amb
0 4 8 12 16 20
(2) T = 25 C.
amb
V [V], Collector-Emitter Voltage
CE
Fig. 4 Base-Emitter On Voltage
Fig.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
1200
V = 2V
CE
1000
V
BE
(mV)
10
800
600
400
1
200
0
0. 1 1 10 100 1000 0. 1
0 0. 2 0. 4 0. 6 0. 8 1 1. 2
V = 5 V.
CE
(1) T = -55 C.
amb
V [V], Base-Emitter Voltage
(2) T = 25 C.
BE
amb
(3) T = 150 C.
amb
Fig.5 Collector Output Capacitance
Fig. 6 Current Gain Bandwidth Product
100
1000
f=1MHz
V =5V
CE
10
100
1
10
0. 1
1
1 10 100 1000
0. 1 1 10 100
V [V], Collector-Base Voltage
CB
I [mA], Collector Current
C
Document Number: DS_S1404004
Version: G14
C [pF], Capacitance
ob
I [mA], Collector Current
C
f [MHz], Current Gain-Bandwidth Product
T
I [mA], Collector Current
C