X-On Electronics has gained recognition as a prominent supplier of 714244XB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 714244XB Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

714244XB Taiwan Semiconductor

714244XB electronic component of Taiwan Semiconductor
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Part No.714244XB
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: BC848CLT1 SOT23 G.P TRANS ON SMD
Datasheet: 714244XB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0449 ea
Line Total: USD 0.04 
Availability - 0
Ship by Thu. 14 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0449
50 : USD 0.0224
100 : USD 0.0202
500 : USD 0.0168
1000 : USD 0.0151

   
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We are delighted to provide the 714244XB from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 714244XB and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power dissipation P 200 mW D BC846 80 Collector-Base Voltage BC847 V 50 V CBO BC848 30 BC846 65 Collector-Emitter Voltage BC847 V 45 V CEO BC848 30 BC846 6 Emitter-Base Voltage BC847 V 6 V EBO BC848 5 Collector Current I 0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER MIN MAX SYMBOL UNIT BC846 80 Collector-Base Breakdown Voltage I = 10AI = 0 V 50 V BC847 - C E (BR)CBO 30 BC848 BC846 65 Collector-Emitter Breakdown Voltage I = 10mA I = 0 V 45 - V BC847 C B (BR)CEO BC848 30 6 BC846 I = 1AI = 0 V Emitter-Base Breakdown Voltage 6 - V BC847 E C (BR)EBO BC848 5 Collector Cut-off Current V = 30V I = 0 I - 100 nA CB E CBO Emitter Cut-off Current V = 5 V I =0 I - 0.1 A EB C EBO 220 BC846A, BC847A, BC848A 110 V = 5V I = 2mA h DC Current Gain BC846B, BC847B, BC848B 200 450 CE C FE BC847C, BC848C 420 800 I = 100mA I = 5mA V - 0.5 Collector-Emitter Saturation Voltage V C B CE(sat) Base-Emitter Saturation Voltage I = 100mA I = 5mA V - 1.1 V C B BE(sat) V = 5V I = 10 mA f Transition frequency f= 100MHz 100 - MHz CE C T Version: G14 Document Number: DS_S1404004BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (BC846A/B, BC847A/B/C, BC848A/B/C) (TA=25 unless otherwise noted) Fig.2 DC Current Gain Fig.1 Static Characteristic 400 100 I = 400A B (1) I = 350A B 300 80 I = 300A B (2) I = 250A h B 200 FE 60 I = 200A B (3) I = 150A B 100 40 I = 100A B 20 0 I = 50A 0 1 10 100 1000 B V = 5 V. I (mA) CE C 0 (1) T = 150 C. amb 0 4 8 12 16 20 (2) T = 25 C. amb V [V], Collector-Emitter Voltage CE Fig. 4 Base-Emitter On Voltage Fig.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1200 V = 2V CE 1000 V BE (mV) 10 800 600 400 1 200 0 0. 1 1 10 100 1000 0. 1 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 V = 5 V. CE (1) T = -55 C. amb V [V], Base-Emitter Voltage (2) T = 25 C. BE amb (3) T = 150 C. amb Fig.5 Collector Output Capacitance Fig. 6 Current Gain Bandwidth Product 100 1000 f=1MHz V =5V CE 10 100 1 10 0. 1 1 1 10 100 1000 0. 1 1 10 100 V [V], Collector-Base Voltage CB I [mA], Collector Current C Document Number: DS_S1404004 Version: G14 C [pF], Capacitance ob I [mA], Collector Current C f [MHz], Current Gain-Bandwidth Product T I [mA], Collector Current C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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