B0540W RH Taiwan Semiconductor

B0520LW,B0530W,B0540W Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix means green compound (halogen-free) SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER B0520LW B0530W B0540W SYMBOL UNIT Power Dissipation P 410 mW D Repetitive Peak Reverse Voltage V 20 30 40 V RRM Reverse Voltage V 14 21 28 V R o I Mean Forward Current @ T =100 C (Lead Temperature) 500 mA O L Non-Repetitive Peak Forward Surge Current (Note 1) I 5.5 A FSM o Thermal Resistance (Junction to Ambient) (Note 2) R 244 C/W JA o Junction and Storage Temperature Range T , T -55 to +125 J STG C Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load Notes: 2. Valid provided that electrodes are kept at ambient temperature PARAMETER B0520LW B0530W B0540W SYMBOL UNIT I =250A 20 -- R Reverse Breakdown Voltage I =130A V - 30 - V R (BR) (Minimum Value) I =20A - - 40 R I =100mA 0.300 0.375 - F Forward Voltage o V I =500mA 0.385 0.430 0.510 V T = 25 C F F J (Maximum Value) I =1000mA - - 0.620 F V = 10V 75 - - R V = 15V - 20 - R Reverse Leakage Current o V = 20V I 10 T = 25 C 250 - A R R J (Maximum Value) V = 30V - 130 - R V = 40V -- 20 R Junction Capacitance V = 0 V f=1.0MHz C 170 pF R J Document Number: DS_S1412004 Version: H14B0520LW,B0530W,B0540W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 2 Forward Current Derating Curve Fig.1 Typical Forward Characteristics 1 10 0. 75 B0540W B0530W 1 B0520LW 0. 5 0. 1 0. 25 0 0. 01 0 25 50 75 100 125 150 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 o T , Lead Temperature ( C) L V Forward Volatge (V) F Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve Fig. 3 1000 450 400 350 100 300 250 200 10 150 100 50 1 0 0 5 10 15 20 25 0 20 40 60 80 100 120 140 Reverse Voltage (V) Ambient Temperature (C) Document Number: DS_S1412004 Version: H14 I Forward Current (A) F Power Dissipation (mW) I Mean Forward Current (A) O Junction Capacitance (pF)