B0520LW,B0530W,B0540W
Taiwan Semiconductor
Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix means
green compound (halogen-free)
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260C/10s
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted)
A
PARAMETER B0520LW B0530W B0540W
SYMBOL UNIT
Power Dissipation P 410 mW
D
Repetitive Peak Reverse Voltage V 20 30 40
V
RRM
Reverse Voltage V 14 21 28 V
R
o
I
Mean Forward Current @ T =100 C (Lead Temperature) 500 mA
O
L
Non-Repetitive Peak Forward Surge Current (Note 1) I 5.5
A
FSM
o
Thermal Resistance (Junction to Ambient) (Note 2) R 244
C/W
JA
o
Junction and Storage Temperature Range T , T -55 to +125
J STG C
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
PARAMETER B0520LW B0530W B0540W
SYMBOL UNIT
I =250A 20 --
R
Reverse Breakdown Voltage
I =130A V - 30 - V
R (BR)
(Minimum Value)
I =20A - - 40
R
I =100mA 0.300 0.375 -
F
Forward Voltage
o
V
I =500mA 0.385 0.430 0.510 V
T = 25 C F
F J
(Maximum Value)
I =1000mA - - 0.620
F
V = 10V 75 - -
R
V = 15V - 20 -
R
Reverse Leakage Current
o
V = 20V I 10
T = 25 C 250 - A
R R
J
(Maximum Value)
V = 30V - 130 -
R
V = 40V -- 20
R
Junction Capacitance V = 0 V f=1.0MHz C 170
pF
R J
Document Number: DS_S1412004 Version: H14B0520LW,B0530W,B0540W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T =25 unless otherwise noted)
A
Fig. 2 Forward Current Derating Curve
Fig.1 Typical Forward Characteristics
1
10
0. 75
B0540W
B0530W
1
B0520LW
0. 5
0. 1
0. 25
0
0. 01
0 25 50 75 100 125 150
0. 0 0. 2 0. 4 0. 6 0. 8 1. 0
o
T , Lead Temperature ( C)
L
V Forward Volatge (V)
F
Fig. 4 Typical Junction Capacitance
Fig. 3 Admissible Power Dissipation Curve
Fig. 3
1000
450
400
350
100
300
250
200
10
150
100
50
1
0
0 5 10 15 20 25
0 20 40 60 80 100 120 140
Reverse Voltage (V)
Ambient Temperature (C)
Document Number: DS_S1412004 Version: H14
I Forward Current (A)
F
Power Dissipation (mW)
I Mean Forward Current (A)
O
Junction Capacitance (pF)