X-On Electronics has gained recognition as a prominent supplier of BAS116 RF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS116 RF Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS116 RF Taiwan Semiconductor

BAS116 RF electronic component of Taiwan Semiconductor
BAS116 RF Taiwan Semiconductor
BAS116 RF Diodes - General Purpose, Power, Switching
BAS116 RF  Semiconductors

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See Product Specifications
Part No. BAS116 RF
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SOT-23 75V 0.2A Swit ching Diode & Array
Datasheet: BAS116 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0237 ea
Line Total: USD 71.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0237
6000 : USD 0.0229
9000 : USD 0.0226
12000 : USD 0.0224
15000 : USD 0.0222
24000 : USD 0.021
30000 : USD 0.0209
75000 : USD 0.0206
150000 : USD 0.0204

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 18000
Multiples : 18000
18000 : USD 0.073

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS116 RF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS116 RF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant V at I =150mA 1.25 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS116 UNIT Marking code on the device JV Power dissipation P 225 mW D Repetitive peak reverse voltage V 75 V RRM Mean forward current I 200 mA O Non-Repetitive peak forward surge current t=1s I 500 mA FSM Thermal resistance (Junction to Ambient)(Note1) R 330 C/W JA Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG Note1: Valid provided that electrodes are kept at ambient temperature 1 Version: F2001 BAS116 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1.0mA, T = 25C - 0.9 F J - 1.0 I = 10mA, T = 25C F J Forward voltage V V F I = 50mA, T = 25C - 1.1 F J I = 150mA, T = 25C - 1.25 F J I =100A, T = 25C 75 - Reverse voltage V V R J R V =75V T = 25C - 5 R J Reverse current I nA R V =75V T = 150C - 80 R J 2.0 f=1 MHz, V =0V - Junction capacitance R C pF J I =10mA, I =10mA, F R 3.0 - Reverse recovery time t s rr R =100, I =1mA L rr ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS116 RF SOT-23 3K / 7 Reel BAS116 RFG SOT-23 3K / 7 Reel Note: G means green compound (halogen free) 2 Version: F2001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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