BC807-16/-25/40 0.3 Walts, PNP Plastic-Encasulate Transistor SOT-23 A F B E Features Ideally suited for automatic insertion C Epitaxial planar die construction G D For switching, AF driver and amplifier applications H Complementary NPN type available (BC817) Qualified to AEC-Q10 standards for high reliability Unit (mm) Unit (inch) Dimensions Min Max Min Max A 2.80 3.00 0.110 0.118 B 1.20 1.40 0.047 0.055 Mechanical Data Case : SOT- 23, Molded plastic C 0.30 0.50 0.012 0.020 D Case material: Molded plastic. UL flammability 1.80 2.00 0.071 0.079 classification rating 94V-0 E 2.25 2.55 0.089 0.100 Mosture sensitivity: Level 1 per J-STD-020C F 0.90 1.20 0.035 0.047 Terminals: Solderable per MIL-STD-202, Method 208 G 0.550 REF 0.022 REF Lead free plating H 0.08 0.19 0.003 0.007 Marking: -16: 5A, -25: 5B, -40: 5C Weight: 0.008 grams (approximate) Ordering Information Suggested PAD Layout Packing Part No. Package Packing 0.95 Code BC807-16/-25/-40 RF SOT-23 3K / 7 Reel 0.037 BC807-16/-25/-40 RFG SOT-23 3K / 7 Reel 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings Rating at 25C ambient temperature unless otherwise specified. Type Number Symbol BC807-16 BC807-25 BC807-40 Units Collector-Base Breakdown Voltage I = -10AI =0 V -50 V CBO C E Collector-Emitter Breakdown Voltage I = -10mA I =0 V 45 V CEO C B Collector current - continuous I -0.5 A C PD 0.3 W Power dissipation Emitter-Base breakdown voltage I = -1 AI =0 v -5 V E C EBO Collector Cut-off Current V = -45V I =0 I -0.1 A CB E CBO Collector Cut-off Current V = -40V I =0 I -0.2 A CB B CEO Emittor Cut-off Current V = -4V I =0 I -0.1 A EB C EBO Collector-Emitter saturation voltage I = -500mA I =50mA V -0.7 V C B CE(sat) Base-Emitter saturation voltage I = -500mA I =50mA V -1.2 V C B BE(sat) Transition frequency V = -5V I = -10mA f=100MHz f 100 MHz CE C T Junction Temperature TJ 150 C Storage Temperature Range T -55 to + 150 C STG Type Number Symbol Min Max Units 807-16 100 250 h DC current gain 807-25 V = -1V I = -100mA 160 400 CE C FE(1) 807-40 250 600 Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : C10 RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40) FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR FIG.1- POWER DERATING CURVE CURRENT 400 O 1000 SEESEE NOTE1NOTE1 T = 25 C A f = 20MHz 300 -V-V == 5.0V5.0V CECE 1V1V 200 100 100 0 10 0 50 100 150 200 1 10 100 1000 T , SUBSTRATE TEMPERATURE ( C) - I , COLLECTOR CURRENT (mA) SB C FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT 1000 1000 -V-V==11VV CECE 00 150150 CC 100 OO 00 2525 CC --5050 CC 00 OO --5050 CC 2525 CC TYPICALTYPICAL 10 100 LIMITSLIMITS OO atat TT == 2525 CC AA OO 150150 CC -/-/II-=- = 1010 CB 1 0.1 10 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 - V , COLLECTOR SATURATION VOLTAGE (V) - I , COLLECTOR CURRENT (mA) CESAT C FIG.5- TYPICAL EMITTER-COLLECTOR FIG.6- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS CHARACTERISTICS 500 100 3.23.2 2.82.8 0.40.4 2.42.4 0.350.35 400 2.02.0 80 0.30.3 1.81.8 1.61.6 0.250.25 300 60 1.41.4 1.21.2 0.20.2 1.01.0 40 200 0.80.8 0.150.15 0.60.6 20 0.10.1 100 0.40.4 -I-I == 00.05.05 mAmA BB -I-I == 0.20.2 mAmA BB 0 0 0 10 012 20 - V , COLLECTOR-EMITTER VOLTAGE (V) - V , COLLECTOR-EMITTER VOLTAGE (V) CE CE Version:C10 - I , COLLECTOR CURRENT (mA) P , POWER DISSIPATION (mW) C - I , COLLECTOR CURRENT (mA) D C h , DC CURRENT GAIN f , GAIN BANDWIDTH PRODUCT (MHz) FE T - I , COLLECTOR CURRENT (mA) C