X-On Electronics has gained recognition as a prominent supplier of BC846B RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC846B RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC846B RFG Taiwan Semiconductor

Hot BC846B RFG electronic component of Taiwan Semiconductor
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Part No.BC846B RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 80V 0.1A NPN Bipolar Transistor
Datasheet: BC846B RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 0.0195 ea
Line Total: USD 0.04 
Availability - 1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 0.0195
10 : USD 0.014
100 : USD 0.0126

38768
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0935
10 : USD 0.0671
100 : USD 0.0341
1000 : USD 0.0308
3000 : USD 0.0209
9000 : USD 0.0187
24000 : USD 0.0187
45000 : USD 0.0165

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC846B RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC846B RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor 200mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 30-80 V CBO High surge current capability V 30-65 V CEO Moisture sensitivity level: level 1, per J-STD-020 V 5-6 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I 0.1 A C h 220-800 FE Package SOT-23 APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC846A 1A BC846B 1B BC847A 1E BC847B 1F Marking code on the device BC847C 1G BC848A 1J BC848B 1K BC848C 1L Power dissipation P 200 mW D 1 Version: I2001 BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC846 80 Collector-base voltage, emitter open BC847 V 50 V CBO BC848 30 BC846 65 Collector-emitter voltage, base open BC847 V 45 V CEO BC848 30 BC846 6 Emitter-base voltage, collector open BC847 V 6 V EBO BC848 5 Collector current, dc I 0.1 C A T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT Collector cutoff - 100 V = 30 V, I = 0 I nA CB E CBO current Emitter cutoff - 0.1 V = 5 V, I = 0 I A EB C EBO current BC846 80 - Collector-base I = 10 A, C BC847 V 50 - V CBO voltage I = 0 E BC848 30 - BC846 65 - Collector- I = 10 mA, C BC847 V 45 - V emitter voltage CEO I = 0 B BC848 30 - BC846 6 - Emitter-base I = 1 A, E BC847 V 6 - V voltage EBO I = 0 C BC848 5 - BC846A/BC847A/BC848A 110 220 DC current V = 5 V, CE BC846B/BC847B/BC848B 200 450 h FE gain I = 2 mA C BC847C/BC848C 420 800 2 Version: I2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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