X-On Electronics has gained recognition as a prominent supplier of BC847BW RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BW RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BW RFG Taiwan Semiconductor

BC847BW RFG electronic component of Taiwan Semiconductor
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Part No.BC847BW RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-323, 50V, 0.1A, NPN Bipolar Transistor
Datasheet: BC847BW RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 13710
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13710
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0759
100 : USD 0.0385
1000 : USD 0.0352
3000 : USD 0.0297
9000 : USD 0.0264
24000 : USD 0.0242
45000 : USD 0.0231
99000 : USD 0.022

   
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We are delighted to provide the BC847BW RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BW RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846AW BC850CW Taiwan Semiconductor NPN General Purpose Transistor FEATURES KEY PARAMETERS Low reverse current, high reliability PARAMETER VALUE UNIT Surface device type mounting I 0.1 A C Moisture sensitivity level 1 V 30 - 80 V CBO Matte Tin(Sn) lead finish with Nickel(Ni) underplate High temperature soldering guaranteed : 260C/10s V 30 - 65 V CEO RoHS Compliant V 5 - 6 V EBO Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package SOT-323 APPLICATIONS General-purpose switching and amplification MECHANICAL DATA Case: SOT-323 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Weight: 5.00mg (approximately) SOT-323 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 200 mW D Collector Current I 0.1 A C Peak Collector Current I 0.2 A CM Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: C2102 BC846AW BC850CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT BC846AW/BW/CW 80 - V BC847AW/BW/CW 50 - V Collector-Base Breakdown BC848AW/BW/CW IC = 10A V 30 - V CBO Voltage BC849AW/BW/CW 30 - V BC850AW/BW/CW 50 - V BC846AW/BW/CW 65 - V BC847AW/BW/CW 45 - V Collector-Emitter Breakdown BC848AW/BW/CW IC = 10mA V(BR)CEO 30 - V Voltage BC849AW/BW/CW 30 - V BC850AW/BW/CW 45 - V BC846AW/BW/CW 6 - V BC847AW/BW/CW 6 - V Emitter-Base Breakdown BC848AW/BW/CW IE = 1A V 5 - V EBO Voltage BC849AW/BW/CW 5 - V BC850AW/BW/CW 5 - V Collector Cut-off Current VCB = 30V ICBO - 15 nA Emitter Cut-off Current VEB = 5V IEBO - 100 nA BC846AW - BC850AW 110 220 - DC Current Gain BC846BW - BC850BW VCE = 5V, IC = 2mA hFE 200 450 - BC846CW - BC850CW 420 800 - IC = 10mA, IB = 0.5mA - 0.25 V Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 5mA - 0.60 V VCE = 5V, IC = 10mA , Transition Frequency fT 100 - MHz f = 100MHz VCE= 5V, IC = 2mA 0.58 0.70 V Base Emitter Voltage VBE VCE= 5V, IC = 10mA - 0.77 V VCB = 10V, IE = 0, Collector Output Capacitance Cob - 4.50 pF f = 1MHz 2 Version: C2102

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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