X-On Electronics has gained recognition as a prominent supplier of BC856A RF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856A RF Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC856A RF Taiwan Semiconductor

BC856A RF electronic component of Taiwan Semiconductor
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Part No.BC856A RF
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R
Datasheet: BC856A RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0209 ea
Line Total: USD 125.4 
Availability - 0
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 15 Oct to Mon. 21 Oct
MOQ : 6000
Multiples : 3000
6000 : USD 0.0209
12000 : USD 0.02
18000 : USD 0.0194

   
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We are delighted to provide the BC856A RF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856A RF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 2 Emitter 1 Base B E Features Epitaxial planar die construction Surface device type mounting C D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Unit (mm) Unit (inch) Dimensions Min Max Min Max Mechanical Data A Case : SOT- 23 small outline plastic package 2.80 3.00 0.110 0.118 B Terminal: Matte tin plated, lead free., solderable 1.20 1.40 0.047 0.055 per MIL-STD-202, Method 208 guaranteed C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.043 Ordering Information Suggested PAD Layout Part No. Package Packing Marking 0.95 SOT-23 BC856A RF 3K / 7" Reel 3A 0.037 SOT-23 BC856B RF 3K / 7" Reel 3B SOT-23 BC857A RF 3K / 7" Reel 3E SOT-23 BC857B RF 3K / 7" Reel 3F 2.0 0.079 SOT-23 BC857C RF 3K / 7" Reel 3G 0.9 SOT-23 BC858A RF 3K / 7" Reel 3J 0.035 SOT-23 BC858B RF 3K / 7" Reel 3K 0.8 SOT-23 BC858C RF 3K / 7" Reel 3L 0.031 BC856A RFG SOT-23 3K / 7" Reel 3A BC856B RFG SOT-23 3K / 7" Reel 3B BC857A RFG SOT-23 3K / 7" Reel 3E BC857B RFG SOT-23 3K / 7" Reel 3F BC857C RFG SOT-23 3K / 7" Reel 3G SOT-23 BC858A RFG 3K / 7" Reel 3J SOT-23 BC858B RFG 3K / 7" Reel 3K SOT-23 BC858C RFG 3K / 7" Reel 3L Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 250 mW BC856 -80 Collector-Base Voltage V -50 V BC857 CBO -30 BC858 BC856 -65 Collector-Emitter Voltage V -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current IC -0.1 A Junction and Storage Temperature Range TJ, TSTG -55 to + 150 C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : E11BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Symbol Min Max Units BC856 -80 V Collector-Base Breakdown Voltage BC857 I = -10AI = 0 -50 - V C E (BR)CBO BC858 -30 BC856 -65 I = -10mA I = 0 V Collector-Emitter Breakdown Voltage BC857 (BR)CEO -45 - V C B -30 BC858 Emitter-Base Breakdown Voltage I = -1AI = 0 V -5 - E C (BR)EBO V Collector Cut-off Current V = -30V I = 0 I - -15 CBO nA CB E Emitter Cut-off Current V = -5V I =0 I - -0.1 EBO A EB C BC856A, BC857A, BC858A 125 250 h DC current gain BC856B, BC857B, BC858B V = -5V I = -2mA 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter saturation voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) Base-Emitter saturation voltage I = -100mA I = -5mA V - -1.1 V C B BE(sat) Transition frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Tape & Reel specification Item Symbol Dimension(mm) Carrier width A 3.15 0.10 TSC label B 2.77 0.10 Carrier length C 1.22 0.10 Carrier depth Top Cover Tape Sprocket hole d 1.50 0.10 Reel outside diameter D 178 1 D1 55 Min Reel inner diameter Feed hole width D2 13.0 0.20 Carieer Tape Sprocke hole position E 1.75 0.10 F 3.50 0.05 Punch hole position Any Additional Label (If Required) P0 4.00 0.10 Sprocke hole pitch Embossment center P1 2.00 0.05 Overall tape thickness T 0.229 0.013 W 8.10 0.20 Tape width P0 d Reel width W1 12.30 0.20 P1 T E A F W C B W1 Direction of Feed D D2 D1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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