KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package - High temperature soldering guaranteed: 260C/10s 1. Emitter - Weight: 195mg (approximately) 2. Collector 3. Base APPLICATION - General purpose switching and AF amplifier application TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Collector Power Dissipation P 0.5 W C Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5 V EBO I Collector Current 0.15 A C Thermal Resistance From Junction to Ambient R 250 /W JA Junction and Storage Temperature Range T , T -55 to + 150 C J STG PARAMETER MIN MAX SYMBOL UNIT V = 60V, I = 0 I Collector Cut-off Current - 0.1 A CB E CBO V = 5V, I = 0 I - 0.1 Emitter Cut-off Current EB C A EBO V = 6V, I = 2mA h 70 700 CE C FE(1) DC Current Gain V = 6V, I = 150mA h 25 CE C FE(2) I = 100mA, I =10mA Collector-Emitter Saturation Voltage V 0.25 V C B CE(sat) I = 100mA, I =10mA V Base-Emitter Saturation Voltage 1 V C B BE(sat) V = 10V, I =1mA f 80 Transition Frequency CE C MHz T V = 10V, I =0, f=1MHz Collector Output Capacitance C 3.5 pF CB E ob CLASSIFIACTION OF h FE Y GR BL RANK O RANGE 120-240 200-400 300-700 70-140 Version: A14 Document Number: DS S1405004KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A FIG.1 Static Characteristic FIG.2 h vs. I FE C FIG.3 V vs. I FIG.4 VB vs. I CE(sat) C BE(sat) C FIG.5 C / C vs. V / V FIG.6 f vs. I ob Ib CB Eb T C Document Number: DS S1405004 Version: A14