X-On Electronics has gained recognition as a prominent supplier of MMBT3906L RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906L RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3906L RFG Taiwan Semiconductor

MMBT3906L RFG electronic component of Taiwan Semiconductor
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Part No.MMBT3906L RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 -40V -0.2A PN P Bipolar Transistor
Datasheet: MMBT3906L RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1485 ea
Line Total: USD 0.15 
Availability - 8409
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8409
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1485
10 : USD 0.0891
100 : USD 0.0396
1000 : USD 0.0297
3000 : USD 0.0231
9000 : USD 0.0198
24000 : USD 0.0187
45000 : USD 0.0176
99000 : USD 0.0165

   
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We are delighted to provide the MMBT3906L RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906L RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906L Taiwan Semiconductor Small Signal Product 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 8 mg (approximately) - Marking Code: 3E. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 350 mW D Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO I Collector Current -200 mA C o Thermal Resistance Junction-Ambient R 357 JA C/W o Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes:1. Valid provided that electrodes are kept at ambient temperature MIN MAX PARAMETER SYMBOL UNIT Collector-Base Breakdown Voltage I = 10 AVI = 0 -40 - E V C (BR)CBO I = 0 Collector-Emitter Breakdown Voltage I = -1 mA V -40 - V B C (BR)CEO Emitter-Base Breakdown Voltage I = -10 AVI = 0 -5 - V E C (BR)EBO Collector Base Cut-off Current V = -40 V I - -100 nA CB CBO V = -6 V I Emitter Base Cut-off Current --50 nA EB EBO V = -1 V I = -0.1 mA 60 C CE I = -1 mA V = -1 V 80 C CE V = -1 V I = -10 mA h 100 DC Current Gain 300 CE C FE I = -50 mA V = -1 V 60 CE C I = -100 mA V = -1 V 30 C CE I = -10 mA I = -1 mA - -0.25 B C V Collector-Emitter Saturation Voltage V CE(sat) I = -50 mA I = -5 mA --0.4 C B I = -1 mA I = -10 mA -0.65 -0.85 B C V Base-Emitter Saturation Voltage V BE(sat) I = -50 mA I = -5 mA - -0.95 C B V = -20 V I = -10 mA f= 100MHz f 250 - Gain-Bandwidth Product MHz CE C T Output Capacitance V = -5 V I = 0 f= 1MHz C -4.5 pF CB E obo V = -3 V V = -0.5 V I = -10 mA t - 35 Delay time ns CC BE C d I = -1.0 mA Rise time t - 35 ns B1 r V = -3 V I = -10 mA t Storage time - 225 ns CC C s I = I = -1.0 mA t - 75 Fall time B1 B2 ns f Document Number: DS S1502001 Version: A15MMBT3906L Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Capacitance Fig. 2 Charge Data 10 10000 V = 40 V CC I /I = 10 D B QT Cobo 1000 Cibo 100 QA 1 10 0. 1 1 10 100 1 10 100 1000 Reverse Bias (V) I - Collector Current (mA) C Fig. 3 Turn - On Time Fig. 4 Fall Time 1000 1000 I /I = 10 V = 40 V C B CC I = I B1 B2 1r V = 3.0 V 100 CC 100 I /I = 20 C B 15 V 40 V 10 10 2.0 V I /I = 10 C B 1d V = 0 V OB 1 1 1 10 100 1000 1 10 100 1000 I - Collector Current (mA) I - Collector Current (mA) C C Fig. 6 Noise Figure vs. Source Resistance Fig. 5 Noise Figure vs. Frequency 12 f = 1.0 kHz 5 10 Source Resistance = 200 I = 1.0 mA C I = 1.0 mA C 4 8 I = 0.5 mA C Source Resistance = 2.0 K I = 0.5 mA C 6 3 Source Resistance = 2.0 K I = 50A C 4 2 I = 50 A C 2 I = 100 A C 1 Source Resistance = 2.0 K 0 I = 100 A C 0. 1 1 10 100 0 0. 1 1 10 100 Rg, Source Resistance (kOhms) f - Frequency (kHz) Document Number: DS S1502001 Version: A15 Time (ns) Capacitance (pF) N Noise Figure (dB) F - N , Noise Figure (dB) F Q Charge (pC) tf - Fall Time (ns)

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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