MMBT3906L Taiwan Semiconductor Small Signal Product 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 8 mg (approximately) - Marking Code: 3E. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 350 mW D Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO I Collector Current -200 mA C o Thermal Resistance Junction-Ambient R 357 JA C/W o Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes:1. Valid provided that electrodes are kept at ambient temperature MIN MAX PARAMETER SYMBOL UNIT Collector-Base Breakdown Voltage I = 10 AVI = 0 -40 - E V C (BR)CBO I = 0 Collector-Emitter Breakdown Voltage I = -1 mA V -40 - V B C (BR)CEO Emitter-Base Breakdown Voltage I = -10 AVI = 0 -5 - V E C (BR)EBO Collector Base Cut-off Current V = -40 V I - -100 nA CB CBO V = -6 V I Emitter Base Cut-off Current --50 nA EB EBO V = -1 V I = -0.1 mA 60 C CE I = -1 mA V = -1 V 80 C CE V = -1 V I = -10 mA h 100 DC Current Gain 300 CE C FE I = -50 mA V = -1 V 60 CE C I = -100 mA V = -1 V 30 C CE I = -10 mA I = -1 mA - -0.25 B C V Collector-Emitter Saturation Voltage V CE(sat) I = -50 mA I = -5 mA --0.4 C B I = -1 mA I = -10 mA -0.65 -0.85 B C V Base-Emitter Saturation Voltage V BE(sat) I = -50 mA I = -5 mA - -0.95 C B V = -20 V I = -10 mA f= 100MHz f 250 - Gain-Bandwidth Product MHz CE C T Output Capacitance V = -5 V I = 0 f= 1MHz C -4.5 pF CB E obo V = -3 V V = -0.5 V I = -10 mA t - 35 Delay time ns CC BE C d I = -1.0 mA Rise time t - 35 ns B1 r V = -3 V I = -10 mA t Storage time - 225 ns CC C s I = I = -1.0 mA t - 75 Fall time B1 B2 ns f Document Number: DS S1502001 Version: A15MMBT3906L Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Capacitance Fig. 2 Charge Data 10 10000 V = 40 V CC I /I = 10 D B QT Cobo 1000 Cibo 100 QA 1 10 0. 1 1 10 100 1 10 100 1000 Reverse Bias (V) I - Collector Current (mA) C Fig. 3 Turn - On Time Fig. 4 Fall Time 1000 1000 I /I = 10 V = 40 V C B CC I = I B1 B2 1r V = 3.0 V 100 CC 100 I /I = 20 C B 15 V 40 V 10 10 2.0 V I /I = 10 C B 1d V = 0 V OB 1 1 1 10 100 1000 1 10 100 1000 I - Collector Current (mA) I - Collector Current (mA) C C Fig. 6 Noise Figure vs. Source Resistance Fig. 5 Noise Figure vs. Frequency 12 f = 1.0 kHz 5 10 Source Resistance = 200 I = 1.0 mA C I = 1.0 mA C 4 8 I = 0.5 mA C Source Resistance = 2.0 K I = 0.5 mA C 6 3 Source Resistance = 2.0 K I = 50A C 4 2 I = 50 A C 2 I = 100 A C 1 Source Resistance = 2.0 K 0 I = 100 A C 0. 1 1 10 100 0 0. 1 1 10 100 Rg, Source Resistance (kOhms) f - Frequency (kHz) Document Number: DS S1502001 Version: A15 Time (ns) Capacitance (pF) N Noise Figure (dB) F - N , Noise Figure (dB) F Q Charge (pC) tf - Fall Time (ns)