TS13002A High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BV 400V CEO 3. Base BV 700V CBO I 0.3A C V 1.5V I / I = 200mA / 20mA CE(SAT) C B Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13002ACT B0G TO-92 1Kpcs / Bulk TS13002ACT A3G TO-92 2Kpcs / Ammo Note: G denote for Green Product Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V 700V V CBO Collector-Emitter Voltage V 400V V CEO Emitter-Base Voltage V 9 V EBO DC 0.3 Collector Current I A C Pulse 0.5 Collector Power Dissipation P 0.6 W D Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Thermal Performance Parameter Symbol Limit Unit Junction to Ambient Thermal Resistance R 122 C/W JA Document Number: DS P0000252 1 Version: F15 Not Recommended TS13002A High Voltage NPN Transistor Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I = 1mA, I = 0 BV 700 -- -- V C B CBO Collector-Emitter Breakdown Voltage I = 10mA, I = 0 BV 400 -- -- V C E CEO Emitter-Base Breakdown Voltage I = 1mA, I = 0 BV 9 -- -- V E C EBO Collector Cutoff Current V = 700V, I = 0 I -- -- 1 uA CB E CBO Emitter Cutoff Current V = 7V, I = 0 I -- -- 1 uA EB C EBO I / I = 50mA / 10mA V -- 0.2 0.4 C B CE(SAT)1 Collector-Emitter Saturation Voltage I / I = 100mA / 10mA V -- 0.45 1 V C B CE(SAT)2 I / I = 200mA / 20mA V -- 1 1.5 C B CE(SAT)3 I / I = 50mA / 10mA V -- -- 1 C B BE(SAT)1 Base-Emitter Saturation Voltage V I / I = 100mA / 10mA V -- -- 1.2 C B BE(SAT)2 V = 10V, I = 10mA h 1 15 -- 40 CE C FE V = 10V, I = 100mA h 2 DC Current Gain 25 -- 40 CE C FE V = 10V, I = 280mA h 3 12 -- 24 CE C FE Dynamic Frequency V = 10V, I = 0.1A f 4 -- -- MHz CE C T Output Capacitance V = 10V, f = 0.1MHz Cob -- 21 -- pF CB Resistive Load Switching Time (Ratings) V = 125V, I = 100mA, CC C Rise Time t -- 1.1 -- uS r I = I = 20mA, B1 B2 Storage Time t -- 2 4 uS STG t = 25uS p Fall Time t -- 0.2 0.7 uS f Duty Cycle 1% Note : pulse test: pulse width 5mS, duty cycle 10% Document Number: DS P0000252 2 Version: F15 Not Recommended