TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BV 530V 2. Collector CEO 3. Base BV 900V CBO I 1.5A C V 0.5V I =0.5A, I =0.1A CE(SAT) C B Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13003HVCT B0 TO-92 1Kpcs / Bulk TS13003HVCT B0G TO-92 1Kpcs / Bulk TS13003HVCT A3 TO-92 2Kpcs / Ammo TS13003HVCT A3G TO-92 2Kpcs / Ammo Note: G denote for Halogen Free Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V 900 V CBO Collector-Emitter Voltage V 530 V CEO Emitter-Base Voltage V 10 V EBO DC 1.5 Collector Current I A C Pulse 3 Maximum Power Dissipation P 0.5 W D P 1.96 W tot o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T - 55 to +150 C STG Thermal Performance Parameter Symbol Limit Unit o Junction to Case Thermal Resistance R 64 C/W JC o Junction to Ambient Thermal Resistance RJ 248 C/W A 1/6 Version: E13 TS13003HV High Voltage NPN Transistor o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I =1mA, I =0 BV 900 -- -- V C B CBO Collector-Emitter Breakdown Voltage I =10mA, I =0 BV 530 -- -- V C E CEO Emitter-Base Breakdown Voltage I =1mA, I =0 BV 9 -- -- V E C EBO Collector Cutoff Current V =800V, I =0 I -- -- 10 uA CB E CBO Emitter Cutoff Current V =10V, I = 0 I -- -- 0.5 uA EB C EBO I =0.5A, I =0.1A V -- 0.3 0.5 C B CE(SAT)1 Collector-Emitter Saturation Voltage I =1A, I =0.25A V -- 0.5 1 V C B CE(SAT)2 I =1.5A, I =0.5A V -- 0.9 2 C B CE(SAT)3 I =0.5A, I =0.1A V -- -- 1 C B BE(SAT)1 Base-Emitter Saturation Voltage V I =1A, I =0.25A V -- -- 1.2 C B BE(SAT)2 V =10V, I =10mA 15 -- 40 CE C DC Current Gain V =10V, I =400mA h 20 -- 40 CE C FE V =10V, I =1A 6 -- 40 CE C Dynamic Characteristics Frequency V =10V, I =0.1A f 4 -- -- MHz CE C T Output Capacitance V =10V, f =0.1MHz Cob -- 21 -- pF CB Resistive Load Switching Time (Ratings) Delay Time V =125V, I =1A, t -- 0.05 0.2 uS CC C d I = I = 0.2A, Rise Time t -- 1.1 -- uS B1 B2 r t =25uS Storage Time p t -- 2 4 uS STG Duty Cycle 1% Fall Time t -- 0.4 0.7 uS f Note: pulse test: pulse width 300uS, duty cycle 2% 2/6 Version: E13