X-On Electronics has gained recognition as a prominent supplier of TS13005CZ C0 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TS13005CZ C0 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TS13005CZ C0 Taiwan Semiconductor

TS13005CZ C0 electronic component of Taiwan Semiconductor
TS13005CZ C0 Taiwan Semiconductor
TS13005CZ C0 Bipolar Transistors - BJT
TS13005CZ C0  Semiconductors

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See Product Specifications
Part No. TS13005CZ C0
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: High Voltage NPN Transistor
Datasheet: TS13005CZ C0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.4007 ea
Line Total: USD 400.7 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 25 Apr to Thu. 01 May
MOQ : 1000
Multiples : 1000
1000 : USD 0.4007

   
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We are delighted to provide the TS13005CZ C0 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TS13005CZ C0 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BV 400V 2. Collector CEO 3. Emitter BV 700V CBO I 4A C V 1V I =4A, I =1A CE(SAT) C B Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13005CZ C0G TO-220 50pcs / Tube TS13005CI C0G ITO-220 50pcs / Tube Note: G denote for Halogen Free Product Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V 700 V CBO Collector-Emitter Voltage V 400 V CEO Emitter-Base Voltage V 9 V EBO DC 4 Collector Current I A C Pulse 8 DC 2 Base Current I A B Pulse 4 TO-220 75 Total Power Dissipation P W tot ITO-220 30 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Note: Single Pulse. P = 300uS, Duty 2% W Document Number: DS P0000250 1 Version: E15 TS13005 High Voltage NPN Transistor Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I =1mA, I =0 BV 700 -- -- V C B CBO Collector-Emitter Breakdown Voltage I =10mA, I =0 BV 400 -- -- V C E CEO Emitter-Base Breakdown Voltage I =0.1mA, I =0 BV 9 -- -- V E C EBO Collector Cutoff Current V =400V, I =0 I -- -- 250 uA CE B CEO Collector Cutoff Current V =700V, I =0 I -- -- 1 mA CB E CBO Emitter Cutoff Current V = 9V, I =0 I -- -- 1 mA EB C EBO I =1A, I =0.2A V -- -- 0.5 C B CE(SAT)1 Collector-Emitter Saturation Voltage I =2A, I =0.5A V -- -- 0.6 V C B CE(SAT)2 I =4A, I =1A V -- -- 1 C B CE(SAT)3 I =1A, I =0.2A V -- -- 1.2 C B BE(SAT)1 Base-Emitter Saturation Voltage V I =2A, I =0.5A V -- -- 1.6 C B BE(SAT)2 V =5V, I = 1A 15 -- 32 CE C DC Current Gain h FE V =5V, I = 2A 8 -- 40 CE C Dynamic Frequency V =10V, I =0.5A f 4 -- -- MHz CE C T Output Capacitance V =10V, f =0.1MHz Cob -- 65 -- pF CB Resistive Load Turn On Time V =125V, I =2A, t -- 0.3 0.7 uS CC C ON I =I =0.4A, t =25uS Storage Time t -- 2.2 3 uS B1 B2 P STG Duty Cycle 1% Fall Time t -- 0.3 0.5 uS f Note: pulse test: pulse width 300uS, duty cycle 2% Document Number: DS P0000250 2 Version: E15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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