X-On Electronics has gained recognition as a prominent supplier of TS13005CZ C0 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TS13005CZ C0 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TS13005CZ C0 Taiwan Semiconductor

TS13005CZ C0 electronic component of Taiwan Semiconductor
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Part No.TS13005CZ C0
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: High Voltage NPN Transistor
Datasheet: TS13005CZ C0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.4138 ea
Line Total: USD 413.8 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4138

   
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TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BV 400V 2. Collector CEO 3. Emitter BV 700V CBO I 4A C V 1V I =4A, I =1A CE(SAT) C B Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13005CZ C0G TO-220 50pcs / Tube TS13005CI C0G ITO-220 50pcs / Tube Note: G denote for Halogen Free Product Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V 700 V CBO Collector-Emitter Voltage V 400 V CEO Emitter-Base Voltage V 9 V EBO DC 4 Collector Current I A C Pulse 8 DC 2 Base Current I A B Pulse 4 TO-220 75 Total Power Dissipation P W tot ITO-220 30 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Note: Single Pulse. P = 300uS, Duty 2% W Document Number: DS P0000250 1 Version: E15 TS13005 High Voltage NPN Transistor Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I =1mA, I =0 BV 700 -- -- V C B CBO Collector-Emitter Breakdown Voltage I =10mA, I =0 BV 400 -- -- V C E CEO Emitter-Base Breakdown Voltage I =0.1mA, I =0 BV 9 -- -- V E C EBO Collector Cutoff Current V =400V, I =0 I -- -- 250 uA CE B CEO Collector Cutoff Current V =700V, I =0 I -- -- 1 mA CB E CBO Emitter Cutoff Current V = 9V, I =0 I -- -- 1 mA EB C EBO I =1A, I =0.2A V -- -- 0.5 C B CE(SAT)1 Collector-Emitter Saturation Voltage I =2A, I =0.5A V -- -- 0.6 V C B CE(SAT)2 I =4A, I =1A V -- -- 1 C B CE(SAT)3 I =1A, I =0.2A V -- -- 1.2 C B BE(SAT)1 Base-Emitter Saturation Voltage V I =2A, I =0.5A V -- -- 1.6 C B BE(SAT)2 V =5V, I = 1A 15 -- 32 CE C DC Current Gain h FE V =5V, I = 2A 8 -- 40 CE C Dynamic Frequency V =10V, I =0.5A f 4 -- -- MHz CE C T Output Capacitance V =10V, f =0.1MHz Cob -- 65 -- pF CB Resistive Load Turn On Time V =125V, I =2A, t -- 0.3 0.7 uS CC C ON I =I =0.4A, t =25uS Storage Time t -- 2.2 3 uS B1 B2 P STG Duty Cycle 1% Fall Time t -- 0.3 0.5 uS f Note: pulse test: pulse width 300uS, duty cycle 2% Document Number: DS P0000250 2 Version: E15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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