TSA884CX RFG Taiwan Semiconductor

TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 Pin D efinition: PRODUCT SUMMARY 1. Base 2. Emitter BV -500V CBO 3. Collector BV -500V CEO I -150mA C V -0.5V I / I = -50mA / -10mA CE(SAT) C B Features Ordering Information Low Saturation Voltages Part No. Package Packing Excellent gain characteristics specified up to -50mA TSA884CX RFG SOT-23 3Kpcs / 7 Reel Structure Note: G denotes for Halogen Free Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V -500 V CBO Collector-Emitter Voltage V -500 V CEO Emitter-Base Voltage V -5 V EBO DC -150 Collector Current I mA C Pulse -500 Total Power Dissipation P 0.3 W TOT Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage I = -100uA, I = 0 BV -500 -- -- V C E CBO Collector-Emitter Breakdown Voltage I = -10mA, I = 0 BV -500 -- -- V C B CEO Emitter-Base Breakdown Voltage I = -100uA, I = 0 BV -5 -- -- V E C EBO Collector Cutoff Current V = 120V, I = 0 I -- -- -100 nA CB E CBO Emitter Cutoff Current V = 6V, I = 0 I -- -- -100 nA EB C EBO I = -20mA, I = -2mA V 1 -- -- -0.2 C B CE(SAT) Collector-Emitter Saturation Voltage V I = -50mA, I = -10mA V 2 -- -0.5 C B CE(SAT) Base-Emitter Saturation Voltage I = -50mA, I = -10mA V -- -- -0.9 V C B BE(SAT) Base-Emitter on Voltage V = -10V, I = -50mA V -- -- -0.9 V CE C BE(ON) V = -10V, I = -1mA h 1 150 -- 300 CE C FE DC Current Transfer Ratio V = -10V, I = -50mA h 2 80 -- 300 CE C FE V = -10V, I = -100mA h 3 -- 15 -- CE C FE Transition Frequency V =10V, I =-100mA f -- 50 -- MHz CE C T Output Capacitance V = 20V, f=1MHz Cob -- -- 8 pF CB Turn On Time V = -100V, I = -50mA Ton -- 110 -- nS CE C Turn Off Time I =-5mA, I =-10mA Toff -- 1500 -- nS B1 B2 Document Number: DS P0000262 1 Version: E15 TSA884 PNP Silicon Planar High Voltage Transistor Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. V v.s. V Figure 4. Power Derating CE(SAT) BE(SAT Document Number: DS P0000262 2 Version: E15