X-On Electronics has gained recognition as a prominent supplier of TSA884CX RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TSA884CX RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TSA884CX RFG Taiwan Semiconductor

TSA884CX RFG electronic component of Taiwan Semiconductor
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Part No.TSA884CX RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 -500V -0.15A PNP Bipolar Transistor
Datasheet: TSA884CX RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4092 ea
Line Total: USD 0.41 
Availability - 11601
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11601
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.3377
100 : USD 0.2354
500 : USD 0.1903
1000 : USD 0.1683
3000 : USD 0.1463
9000 : USD 0.1397
24000 : USD 0.1386

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSA884CX RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSA884CX RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TSA884 PNP Silicon Planar High Voltage Transistor SOT-23 Pin D efinition: PRODUCT SUMMARY 1. Base 2. Emitter BV -500V CBO 3. Collector BV -500V CEO I -150mA C V -0.5V I / I = -50mA / -10mA CE(SAT) C B Features Ordering Information Low Saturation Voltages Part No. Package Packing Excellent gain characteristics specified up to -50mA TSA884CX RFG SOT-23 3Kpcs / 7 Reel Structure Note: G denotes for Halogen Free Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V -500 V CBO Collector-Emitter Voltage V -500 V CEO Emitter-Base Voltage V -5 V EBO DC -150 Collector Current I mA C Pulse -500 Total Power Dissipation P 0.3 W TOT Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T - 55 to +150 C STG Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage I = -100uA, I = 0 BV -500 -- -- V C E CBO Collector-Emitter Breakdown Voltage I = -10mA, I = 0 BV -500 -- -- V C B CEO Emitter-Base Breakdown Voltage I = -100uA, I = 0 BV -5 -- -- V E C EBO Collector Cutoff Current V = 120V, I = 0 I -- -- -100 nA CB E CBO Emitter Cutoff Current V = 6V, I = 0 I -- -- -100 nA EB C EBO I = -20mA, I = -2mA V 1 -- -- -0.2 C B CE(SAT) Collector-Emitter Saturation Voltage V I = -50mA, I = -10mA V 2 -- -0.5 C B CE(SAT) Base-Emitter Saturation Voltage I = -50mA, I = -10mA V -- -- -0.9 V C B BE(SAT) Base-Emitter on Voltage V = -10V, I = -50mA V -- -- -0.9 V CE C BE(ON) V = -10V, I = -1mA h 1 150 -- 300 CE C FE DC Current Transfer Ratio V = -10V, I = -50mA h 2 80 -- 300 CE C FE V = -10V, I = -100mA h 3 -- 15 -- CE C FE Transition Frequency V =10V, I =-100mA f -- 50 -- MHz CE C T Output Capacitance V = 20V, f=1MHz Cob -- -- 8 pF CB Turn On Time V = -100V, I = -50mA Ton -- 110 -- nS CE C Turn Off Time I =-5mA, I =-10mA Toff -- 1500 -- nS B1 B2 Document Number: DS P0000262 1 Version: E15 TSA884 PNP Silicon Planar High Voltage Transistor Electrical Characteristics Curve (Ta = 25C, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. V v.s. V Figure 4. Power Derating CE(SAT) BE(SAT Document Number: DS P0000262 2 Version: E15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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