TSC497CX Taiwan Semiconductor 300V High Performance NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Epitaxial Planar Type PARAMETER VALUE UNIT NPN Silicon Transistor BV 300 V CBO Compliant to RoHS Directive 2011/65/EU and in BV 300 V CEO accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 I 500 mA C V I =100mA, I =10mA 0.2 V CE(SAT) C B APPLICATION Consumer electronics High voltage switching High voltage driver SOT-23 Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V V 300 CBO Collector-Emitter Voltage V V CEO 300 Emitter-Base Voltage V V 5 EBO Collector Current (DC) I mA C 500 Note Collector Peak Current (Pulse) I A 1 CM Base Current I mA B 200 Power Total Dissipation T =25C P 0.5 W A D o Maximum Operating Junction Temperature T +150 C J o Storage Temperature Range T -55 to +150 C STG Note: Single pulse, Pw 380s, Duty 2% THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT o Junction to Ambient Thermal Resistance R 420 C/W JA o Junction to Case Thermal Resistance R 155 C/W JC 1 Version: A1811 TSC497CX Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) Static Collector-Base Breakdown Voltage I = 100A BV 300 -- -- V C CBO Collector-Emitter Breakdown Voltage I = 10mA BV 300 -- -- V C CEO Emitter-Base Breakdown Voltage I = 100A BV 5 -- -- V E EBO Collector Cutoff Current V = 250V I -- -- 100 nA CB CBO Collector Cutoff Current V = 250V I -- -- 100 nA CES CES Emitter Cutoff Current V = 4V I -- -- 100 nA EB EBO 1 I =100mA, I =10mA V -- -- 0.2 V C B CE(SAT) Collector-Emitter Saturation Voltage 2 I =250mA, I =25mA V -- -- 0.3 V C B CE(SAT) Base-Emitter Saturation Voltage I =250mA, I =25mA V -- -- 1 V C B BE(SAT) Base-Emitter Turn-on Voltage I =250mA, V =10V V -- -- 1 V C CE BE(ON) 1 V =10V, I =1mA, h 100 -- -- CE C FE 2 DC Current Transfer Ratio V =10V, I =100mA, h 80 -- 300 CE C FE 3 V =10V, I =250mA, h 20 -- -- CE C FE (Note 2) Dynamic V =-10V, I =-30mA, CE C Transition Frequency f 75 -- -- MHz T f=100MHz V =-10V, I =0A, CB E Collector Output Capacitance C -- -- 5 pF ob f=100MHz t Delay Time d -- 53 -- ns t ns Rise Time r -- 126 -- V =100V, I =100mA, CC C t ns I =-I =10mA Storage Time s -- 2580 -- B1 B2 ns Fall Time t -- 228 -- f Note: 1. Pulse test: 380s, duty cycle 2% 2. For DESIGN AID ONLY, not subject to production testing ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 3,000pcs / 7 Reel TSC497CX RFG SOT-23 2 Version: A1811