X-On Electronics has gained recognition as a prominent supplier of TSC966CW RPG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TSC966CW RPG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TSC966CW RPG Taiwan Semiconductor

TSC966CW RPG electronic component of Taiwan Semiconductor
TSC966CW RPG Taiwan Semiconductor
TSC966CW RPG Bipolar Transistors - BJT
TSC966CW RPG  Semiconductors

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See Product Specifications
Part No. TSC966CW RPG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor
Datasheet: TSC966CW RPG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.1629 ea
Line Total: USD 814.5 
Availability - 0
MOQ: 5000  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 5000
Multiples : 2500
5000 : USD 0.1629
7500 : USD 0.1576
12500 : USD 0.1509
17500 : USD 0.1469
25000 : USD 0.1427
62500 : USD 0.1389

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 5000
Multiples : 2500
5000 : USD 0.1531
7500 : USD 0.147
12500 : USD 0.1401
17500 : USD 0.1389

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.5175
10 : USD 0.3675
100 : USD 0.2599
500 : USD 0.2112
1000 : USD 0.2002
2500 : USD 0.1595

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.0011
5 : USD 0.678
25 : USD 0.4756
47 : USD 0.3245
129 : USD 0.3061

   
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Product Category
RoHS - XON
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Mxhts
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We are delighted to provide the TSC966CW RPG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSC966CW RPG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TSC966CW Taiwan Semiconductor NPN Silicon Planar High Voltage Transistor FEATURES KEY PERFORMANCE PARAMETERS High BV , BV PARAMETER VALUE UNIT CEO CBO High current gain BV 400 V CEO Compliant to RoHS Directive 2011/65/EU BV 600 V CBO and in accordance to WEEE 2002/96/EC I 300 mA Halogen-Free according to IEC 61249-2-21 C V I =50mA, I =5mA 0.5 V CE(SAT) C B APPLICATION Lighting Switch mode power supply SOT-223 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V V CBO 600 Collector-Emitter Voltage V V CES 600 Collector-Emitter Voltage V =0V V V BE 400 CES Emitter-Base Voltage V V EBO 7 DC A 0.3 Collector Current I C Pulse A 1 Power Total Dissipation T =25C P 1 W A DTOT o Maximum Operating Junction Temperature T +150 C J o Storage Temperature Range T -55 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT o Junction to Ambient Thermal Resistance R 91 C/W JA o Junction to Case Thermal Resistance R 25 C/W JC 1 Version: F1801 TSC966CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) Static I =50A BV 600 -- -- Collector-Base voltage V C CBO Collector-Emitter Saturation Voltage I =100A, V =0 BV 600 -- -- V C BE CES I =1mA BV 400 -- -- Collector-Emitter breakdown voltage V C CEO Emitter-Base breakdown voltage I =50A BV 7 -- -- V E EBO V =7V I -- -- 1.5 Emitter cut-off current A EB EBO Collector cut-off current V =600V I -- -- 0.5 A CB CBO Collector-Emitter Cutoff Current V =400V I -- -- 1 A CE CEO Collector-Emitter saturation voltage I =50mA, I =5mA V --- -- 0.5 V C B CE(SAT) Base-Emitter saturation voltage I =50mA, I =5mA V -- -- 1 V C B BE(SAT) V =5V, I =1mA h 1 100 -- -- CE C FE DC Current Gain V =5V, I =20mA h 2 90 -- 300 CE C FE Transition Frequency f 50 -- -- MHz V = 10V, I =20mA T CE E 7 pF Output Capacitance Cob -- -- V =20V, f =1MHz CB Notes: 1. Pulse test: 380s, duty cycle 2% 2. For DESIGN AID ONLY, not subject to production testing. ORDERING INFORMATION PART NO. PACKAGE PACKING TSC966CW RPG SOT-223 2,500pcs / 13Reel 2 Version: F1801

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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