Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors Low Noise Front Ends 300 typical h of 100 fe 300A minimum h of 150 fe 300B minimum h of 300 fe Microphone Preamplifiers 4 Matched PNP Transistors 320 typical h of 75 fe 2 Matched PNP and 2 Matched NPN Log/Antilog Amplifiers Transistors 340 PNP typical h of 75 fe 340 NPN typical h of 100 fe Low Voltage Noise Current Sources 0.75 nV/ Hz (PNP) 0.8 nV/ Hz (NPN) High Speed Current Mirrors f = 350 MHz (NPN) T fT = 325 MHz (PNP) 500 V matching between devices Multipliers Dielectrically Isolated for low crosstalk and high DC isolation 36V V CEO Description The THAT 300, 320 and 340 are large used in conventional arrays). As a result, they exhibit geometry, 4-transistor, monolithic NPN and/or PNP inter-device crosstalk and DC isolation similar to arrays. They exhibit both high speed and low noise, that of discrete transistors. The resulting low with excellent parameter matching between transis- collector-to-substrate capacitance produces a typical tors of the same gender. Typical base-spreading NPN f of 350 MHz (325 MHz for the PNPs). T resistance is 25 for the PNP devices (30 for the Substrate biasing is not required for normal opera- low-gain NPNs), so their resulting voltage noise is tion, though the substrate should be ac-grounded to under 1 nV/Hz. This makes the 300 series ideally optimize speed and minimize crosstalk. suited for low-noise amplifier input stages, log ampli- fiers, and many other applications. The four-NPN An eight-transistor bare-die array with similar transistor array is available in versions selected for performance characteristics (the THAT 380G) is also h with minimums of 150 (300A) or 300 (300B). fe available from THAT Corporation. Please contact us directly or through your local distributor for more Fabricated in a dielectrically isolated, comple- information. Military-grade temperature range mentary bipolar process, each transistor is electri- packages are available from TT Semiconductor (see cally insulated from the others by a layer of www.ttsemiconductor.com for more information). insulating oxide (not the reverse-biased PN junctions Part Number Configuration Package 300P14-U DIP14 4-Matched NPN Transistors, Beta = 60 min. 300S14-U SO14 300AS14-U 4-Matched NPN Transistors, Beta = 150 min. SO14 300BS14-U 4-Matched NPN Transistors, Beta = 300 min. SO14 320P14-U DIP14 4-Matched PNP Transistors 320S14-U SO14 340P14-U DIP14 2-Matched NPN Transistors and 2-Matched PNP Transistors 340S14-U SO14 Table 1. Ordering Information THAT Corporation 45 Sumner Street Milford, Massachusetts 01757-1656 USA Tel: +1 508 478 9200 Fax: +1 508 478 0990 Web: www.thatcorp.com Copyright 2013, THAT Corporation. Document 600041 Rev 04Document 600041 Rev 04 Page 2 of 8 THAT 300 Series Transistor Array ICs THAT 300 THAT 320 THAT 340 1 14 1 14 1 14 2 13 2 13 2 13 Q1 Q2 Q1 Q2 Q1 Q2 3 3 3 12 12 12 4 SUB SUB 11 4 SUB SUB 11 4 SUB SUB 11 5 10 5 10 5 10 6 9 6 9 6 9 Q3 Q4 Q3 Q4 Q3 Q4 7 8 7 8 7 8 Figure 1. 300 Pinout Figure 2. 320 Pinout Figure 3. 340 Pinout 1 SPECIFICATIONS 2,3 Absolute Maximum Ratings NPN Collector-Emitter Voltage (BV) 36 V Collector Current 30 mA CEO NPN Collector-Base Voltage (BV) 36V Emitter Current 30 mA CBO PNP Collector-Emitter Voltage (BV) 36 V Operating Temperature Range (T ) -40 to +85 C CEO OP PNP Collector-Base Voltage (BV) 36 V Maximum Junction Temperature (T) +125 C CBO JMAX Collector-Substrate Voltage (BV ) 100 V Storage Temperature (TST) -45 to +125 C CS 2 NPN Electrical Characteristics Parameter Symbol Conditions 300 / 340(Q1,Q2) 300A 300B Units Min Typ Max Min Typ Max Min Typ Max V = 10 V, I = 1 mA 60 100 150 300 CB C NPN Current gain h fe I = 10 A 100 C NPN Current Gain Matching h V = 10V, I = 1mA 4 4 4 % fe CB C NPN Noise Voltage Density e V = 10V, I = 1 mA, 1kHz 0.8 0.9 1 N CB C nVHz NPN Gain-Bandwidth Product f I = 1 mA, V = 10V 350 350 350 MHz T C CB NPN V BE I = 1 mA 0.5 3 0.5 3 0.5 3 mV C V 300: VBE1-VBE2 VBE3-VBE4 OS I = 10 mA 0.5 0.5 0.5 mV C 340: V -V BE1 BE2 NPN I B I = 1 mA 500 1500 200 600 100 300 nA C 300: I -I I -I I B1 B2 B3 B4 OS I = 10 A 5 2 1 nA C 340: IB1-IB2 NPN Collector-Base Leakage I V = 25 V 25 25 25 pA CBO CB Current NPN Bulk Resistance r V = 0V, 10 A < I < 10mA 2 2 2 BE CB C NPN Base Spreading Resistance r V = 10 V, I = 1 mA 32 32 32 bb CB C NPN Collector Saturation Voltage VCE(SAT) I = 1 mA, I = 100A 0.05 0.05 0.05 V C B THAT Corporation 45 Sumner Street Milford, Massachusetts 01757-1656 USA Tel: +1 508 478 9200 Fax: +1 508 478 0990 Web: www.thatcorp.com Copyright 2013, THAT Corporation. All rights reserved.