X-On Electronics has gained recognition as a prominent supplier of CCS15S30,L3F Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CCS15S30,L3F Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CCS15S30,L3F Toshiba

CCS15S30,L3F electronic component of Toshiba
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Part No.CCS15S30,L3F
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers 30V Schottky Barrier Diode
Datasheet: CCS15S30,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0757 ea
Line Total: USD 757 
Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0757

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0356
10 : USD 0.7845
100 : USD 0.1957
500 : USD 0.1336
1000 : USD 0.1025
2500 : USD 0.088
10000 : USD 0.0787
20000 : USD 0.0735
50000 : USD 0.0694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CCS15S30,L3F from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CCS15S30,L3F and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30CCS15S30CCS15S30CCS15S30 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low forward voltage: V (1) = 0.33 V (typ.) F 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2C 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 30 V RM Reverse voltage V 20 R Average rectified current I (Note 1) 1.5 A O Non-repetitive peak forward surge current I (Note 2) 5 FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. Start of commercial production 2013-07 2015 Toshiba Corporation 2015-11-13 1 Rev.4.0CCS15S30 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 A (Pulse test) 0.33 0.40 V F F Forward voltage V (2) I = 1.5 A (Pulse test) 0.39 V F F Reverse current I V = 30 V (Pulse test) 0.2 0.5 mA R R Total capacitance C V = 0 V, f = 1 MHz 200 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number 74 CCS15S30 7. Usage Considerations 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2015 Toshiba Corporation 2015-11-13 2 Rev.4.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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