X-On Electronics has gained recognition as a prominent supplier of CCS15S40,L3F(A Rectifiers across the USA, India, Europe, Australia, and various other global locations. CCS15S40,L3F(A Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

CCS15S40,L3F(A Toshiba

CCS15S40,L3F(A electronic component of Toshiba
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Part No.CCS15S40,L3F(A
Manufacturer: Toshiba
Category: Rectifiers
Description: Rectifier Diode Small Signal Schottky Si 40V 1.5A 2-Pin CST-C T/R
Datasheet: CCS15S40,L3F(A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
387: USD 0.105 ea
Line Total: USD 40.64 
Availability - 0
MOQ: 387  Multiples: 387
Pack Size: 387
Availability Price Quantity
2718
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 415
Multiples : 1
415 : USD 0.098
500 : USD 0.0948
1000 : USD 0.0936
2000 : USD 0.092

   
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Product Category
RoHS - XON
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We are delighted to provide the CCS15S40,L3F(A from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CCS15S40,L3F(A and other electronic components in the Rectifiers category and beyond.

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CCS15S40 Schottky Barrier Diode Silicon Epitaxial CCS15S40CCS15S40CCS15S40CCS15S40 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Small package (2) Low forward voltage: V (2) = 0.47 V (typ.) F 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production 2014-01 2015 Toshiba Corporation 2015-11-13 1 Rev.3.0CCS15S40 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 40 V RM Average rectified current I (Note 1) 1.5 A O Non-repetitive peak forward surge current I (Note 2) 5 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note 2: Measured with a 10 ms pulse. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 A (Pulse test) 0.40 0.45 V F F V (2) I = 1.5 A (Pulse test) 0.47 0.55 F F Reverse current I V = 40 V (Pulse test) 0.2 mA R R Total capacitance C V = 0 V, f = 1 MHz 170 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number 7D CCS15S40 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2015 Toshiba Corporation 2015-11-13 2 Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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