CMF01(TE12L,Q,M) Toshiba

CMF01 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF01 Switching Mode Power Supply Applications DC/DC Converter Applications Unit: mm Repetitive peak reverse voltage : V = 600 V RRM Average forward current : I = 2 A F (AV) Peak forward voltage : V = 2 V (max) FM Very fast reverse-recovery time : t = 100 ns (max) rr Suitable for high-density board assembly due to the use of a small TM surface-mount package, M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Repetitive peak reverse voltage V 600 V RRM Average forward current I 2 (Note 1) A F (AV) Non-repetitive peak forward surge current I 30 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg Note1: Ta = 100C Device mounted on a ceramic board board size : 5 0 mm 50 mm soldering land size : 2 mm 2 mm board thickness : 0. 64mm JEDEC Rectangular waveform : = 180 JEITA Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 3-4E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.023 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 2 A (pulse test) 1.4 2.0 V FM FM Repetitive peak reverse current I V = 600 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = -30 A/s 100 ns rr F Forward recovery time t I = 1 A 270 ns fr F Device mounted on a ceramic board board size: 50 mm 50 mm 60 soldering land: 2 mm 2 mm board thickness: 0.64mm Device mounted on a glass-epoxy board Thermal resistance board size: 50 mm 50 mm R 135 C/W th (j-a) soldering land: 6 mm 6 mm (junction to ambient) board thickness: 1.6mm Device mounted on a glass-epoxy board board size: 50 mm 50 mm 210 soldering land: 2.1 mm 1.4 mm board thickness: 1.6mm Thermal resistance (junction to lead) R 16 C/W th (j-) Start of commercial production 2004-03 1 2018-04-04 CMF01 Marking Abbreviation Code Part No. F1 CMF01 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute maximum rating of V for a DC circuit and be no greater than 50% of that of V for an RRM RRM AC circuit. V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into RRM account designing a device at low temperature. I :We recommend that the worst case current be no greater than 80% of the absolute maximum rating of F (AV) I and T be below 120C. When using this device, take the margin into consideration by using an F (AV) j allowable Ta max-I curve. F (AV) IFSM :This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj :Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 120C. 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the circuit board design and land pattern dimensions (provided for reference only). 3) For other design considerations, see the Rectifiers databook or the Toshiba website. 2 2018-04-04 2.1