CLS03(TE16L,Q) Toshiba

CLS03 TOSHIBA Schottky Barrier Diode CLS03 Unit: mm Switching-Mode Power Supply (Secondary-Rectification) Applications (Low Voltage) DC/DC Converter Applications Forward voltage: V = 0.58 V (max) FM Average forward current: I = 10 A F (AV) Repetitive peak reverse voltage: V = 60 V RRM Suitable for compact assembly due to small surface-mount package: TM LFLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 60 V RRM Average forward current I 10 (Note 1) A F (AV) ANODE Non-repetitive peak surge current I 100 (50 Hz) A CATHODE FSM Junction temperature T 40~125 C j JEDEC Storage temperature range T 40~150 C stg JEITA Note 1: T = 70C TOSHIBA 3-4F1A Rectangular waveform ( = 180), V = 30 V R Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.15 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 3.0 A (pulse test) 0.36 FM (1) FM Peak forward voltage V V I = 5.0 A (pulse test) 0.41 FM (2) FM V I = 10 A (pulse test) 0.53 0.58 FM (3) FM I V = 5 V (pulse test) 7.0 A RRM (1) RRM Peak repetitive reverse current I V = 60 V (pulse test) 0.1 1.0 mA RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 345 pF j R Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) Thermal resistance R (board thickness: 1.6 t) 100 C/W th (j-a) (junction to ambient) (soldering land) Cathode 5.7 mm 6.2 mm Anode 4.5 mm 3.4 mm Thermal resistance R 5 C/W th (j-) (junction to lead) Start of commercial production 2004-11 1 2013-11-01 3.20.2CLS03 Marking Abbreviation Code Part No. S03 CLS03 Standard Soldering Pad Unit: mm 5.9 1.8 2.6 4.8 Handling Precautions 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility that SBD will cause thermal runaway when used under high-temperature or high-voltage conditions. Be sure to take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for when designing a circuit incorporating this device. V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account when designing a device for operation at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum F (AV) rating of I and that T be below 100C. When using this device, take the margin into consideration by F (AV) j using an allowable Tamax-I curve. F (AV) I : This rating specifies the non-repetitive peak current. This applies only to abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using the device in order to ensure high reliability. We recommend that j the device be used at a T of below 100C. j 3) Thermal resistance between junction and ambient fluctuates depending on the mounting condition condition of the device. When using the device, design the circuit board and soldering land size to match the appropriate thermal resistance value. 4) Refer to the databook on Rectifiers for further information. 2 2013-11-01 2.5 2.9