X-On Electronics has gained recognition as a prominent supplier of CES388,L3F Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CES388,L3F Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CES388,L3F Toshiba

CES388,L3F electronic component of Toshiba
CES388,L3F Toshiba
CES388,L3F Schottky Diodes & Rectifiers
CES388,L3F  Semiconductors

Images are for reference only
See Product Specifications
Part No. CES388,L3F
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SM Sig Schotky Diode 40 VR 0.1A 1 Circuit
Datasheet: CES388,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0331 ea
Line Total: USD 264.8 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 8000
Multiples : 8000
8000 : USD 0.0331
16000 : USD 0.0309
40000 : USD 0.0305
48000 : USD 0.0303
80000 : USD 0.0295
200000 : USD 0.0291
1000000 : USD 0.0289

0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3371
10 : USD 0.2649
100 : USD 0.0517
1000 : USD 0.027
2500 : USD 0.0251
8000 : USD 0.0203
48000 : USD 0.0203
96000 : USD 0.0183

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CES388,L3F from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CES388,L3F and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CES388 Schottky Barrier Diode Silicon Epitaxial CES388CES388CES388CES388 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low forward voltage : V = 0.54 V (typ). F(3) (2) Low reverse current : I = 1 A (max). R(1) (3) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode ESC Start of commercial production 2011-10 2014-04-07 1 Rev.2.0CES388 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 45 V RM Reverse voltage V 40 R Peak forward current I 300 mA FM Average rectified current I 100 O Non-repetitive peak forward surge current I (Note 1) 1 A FSM Power dissipation P (Note 2) 150 mW D Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10ms pulse. Note 2: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.21 V F(1) F V I = 10 mA 0.30 F(2) F V I = 100 mA 0.54 0.60 F(3) F Reverse current I V = 10 V 1 A R(1) R I V = 40 V 5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 11 25 pF t R 6. Marking 6. 6. 6. MarkingMarkingMarking Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Marking Code Part Number R3 CES388 7. 7. Usage ConsiderationsUsage Considerations 7. 7. Usage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2014-04-07 2 Rev.2.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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